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Negatively charged boron vacancy (NV-) ensembles in hexagonal boron nitride (h-BN) have attracted considerable attention as a promising platform for quantum sensing. Current challenges include the experimental validation of the spatial distribution and electronic states of optically active VB- and optically inactive neutral boron vacancy VB0 defects. To address these issues, we employ electron energy loss spectroscopy (EELS) combined with scanning transmission electron microscopy (STEM) using monochromated 30-keV electrons, effectively reducing background interference. This approach unveils distinct spectral peaks at 2.5 and 1.9 eV, corresponding to VB- and VB0 defects, respectively. Furthermore, we achieve nanometer-scale concentration mapping for VB- and VB0 defects, advancing insights into spin defect configurations crucial for optimizing quantum sensor performance.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: hexagonal boronnitride, boron vacancy, electron energy loss spectroscopy, scanning transmission electron microscopy, frist-principles simulation

刊行年月日: 2025-09-03

出版者: American Chemical Society

掲載誌:

• NANO LETTERS (ISSN: 15306984)

研究助成金:

• 日本学術振興会 JP22H01959
• 日本学術振興会 JP23H02052

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1021/acs.nanolett.5c02988

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更新時刻: 2025-09-08 13:41:17 +0900

MDRでの公開時刻: 2025-08-27 16:18:56 +0900