Short excitonic lifetimes of MoSe<sub>2</sub> monolayers grown by molecular beam epitaxy on the hexagonal boron nitride

Kacper Oreszczuk; Wojciech Pacuski; Aleksander Rodek; Mateusz Raczyński; Tomasz Kazimierczuk; Karol Nogajewski; Takashi Taniguchi; Kenji Watanabe; Marek Potemski; Piotr Kossacki

論文 Short excitonic lifetimes of MoSe₂ monolayers grown by molecular beam epitaxy on the hexagonal boron nitride

Kacper Oreszczuk ; Wojciech Pacuski ; Aleksander Rodek ; Mateusz Raczyński ; Tomasz Kazimierczuk ; Karol Nogajewski ; Takashi Taniguchi (National Institute for Materials Science) ; Kenji Watanabe (National Institute for Materials Science) ; Marek Potemski ; Piotr Kossacki

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Kacper Oreszczuk, Wojciech Pacuski, Aleksander Rodek, Mateusz Raczyński, Tomasz Kazimierczuk, Karol Nogajewski, Takashi Taniguchi, Kenji Watanabe, Marek Potemski, Piotr Kossacki. Short excitonic lifetimes of MoSe₂ monolayers grown by molecular beam epitaxy on the hexagonal boron nitride. 2D Materials. 2024, 11 (2), 025029.

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We present a time-resolved optical study of recently developed narrow-line MoSe2 monolayers grown on hexagonal boron nitride with means of Molecular Beam Epitaxy. We find that the photo- luminescence decay times are significantly shorter than in the case of the exfoliated samples, even below one picosecond. Such a short timescale requires measurements with better resolution than achievable with a streak camera. Therefore, we employ an Excitation Correlation Spectroscopy (ECS) pump-probe technique. This approach allows us to identify two distinct non-radiative re- combination channels attributed to lattice imperfections. The first channel is active at helium temperatures. It reduces the lifetime of the neutral exciton to below one picosecond. The second channel becomes active at elevated temperatures, further shortening the lifetimes of both neutral and charged exciton. The high effectiveness of both radiative and non-radiative recombination makes epitaxial MoSe2 a promising material for ultrafast optoelectronics.

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