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We present a time-resolved optical study of recently developed narrow-line MoSe2 monolayers grown on hexagonal boron nitride with means of Molecular Beam Epitaxy. We find that the photo- luminescence decay times are significantly shorter than in the case of the exfoliated samples, even below one picosecond. Such a short timescale requires measurements with better resolution than achievable with a streak camera. Therefore, we employ an Excitation Correlation Spectroscopy (ECS) pump-probe technique. This approach allows us to identify two distinct non-radiative re- combination channels attributed to lattice imperfections. The first channel is active at helium temperatures. It reduces the lifetime of the neutral exciton to below one picosecond. The second channel becomes active at elevated temperatures, further shortening the lifetimes of both neutral and charged exciton. The high effectiveness of both radiative and non-radiative recombination makes epitaxial MoSe2 a promising material for ultrafast optoelectronics.

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• Creative Commons BY Attribution 4.0 International
  

Keyword: MoSe2 monolayers, photoluminescence decay, non-radiative recombination

Date published: 2024-04-01

Publisher: IOP Publishing

Journal:

• 2D Materials (ISSN: 20531583) vol. 11 issue. 2 025029

Funding:

• EU Graphene Flagship project
• World Premier International Research Center Initiative
• National Science Centre, Poland 2021/41/B/ST3/04183
• JSPS KAKENHI 21H05233

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1088/2053-1583/ad3135

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Updated at: 2025-02-14 12:30:30 +0900

Published on MDR: 2025-02-14 12:30:31 +0900