論文 Polarity‐Reversal of Exchange Bias in van der Waals FePS3/Fe3GaTe2 Heterostructures

Han Xiao ; Bingbing Lyu ; Mengjuan Mi ; Jian Yuan ; Xiandong Zhang ; Lixuan Yu ; Qihui Cui ; Chaofan Wang ; Jun Song ; Mingyuan Huang ; Yufeng Tian ; Liang Liu ; Takashi Taniguchi SAMURAI ORCID ; Kenji Watanabe SAMURAI ORCID ; Min Liu ORCID ; Yanfeng Guo ORCID ; Shanpeng Wang ; Yilin Wang ORCID

Advanced Science - 2024 - Xiao - Polarity‐Reversal of Exchange Bias in van der Waals FePS3 Fe3GaTe2 Heterostructures.pdf
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Han Xiao, Bingbing Lyu, Mengjuan Mi, Jian Yuan, Xiandong Zhang, Lixuan Yu, Qihui Cui, Chaofan Wang, Jun Song, Mingyuan Huang, Yufeng Tian, Liang Liu, Takashi Taniguchi, Kenji Watanabe, Min Liu, Yanfeng Guo, Shanpeng Wang, Yilin Wang. Polarity‐Reversal of Exchange Bias in van der Waals FePS3/Fe3GaTe2 Heterostructures. Advanced Science. 2024, 11 (48), . https://doi.org/10.1002/advs.202409210

説明:

(abstract)

Exchange bias (EB) in antiferromagnetic (AFM)/ferromagnetic heterostructures is crucial for the advancement of spintronic devices and has attracted significant attention. The common EB effect in van der Waals heterostructures features a low blocking temperature (Tb) and a single polarity. In this work, a significant EB effect with a Tb up to 150 K is observed in FePS3/Fe3GaTe2 heterostructures, and in particular, the EB exhibits an unusual temperature-dependent polarity-reversal behavior. Under a high positive field-cooling condition (e.g., ?0H ≥ 0.5 T), a negative EB field (HEB) is observed at low temperatures, and with increasing temperature, the HEB crosses zero at ≈20 K, subsequently becomes positive and later approaches zero again at Tb. A model composed of a top FePS3/interfacial FePS3/Fe3GaTe2 sandwich structure is proposed. The charge transfer from Fe3GaTe2 to FePS3 at the interface induces net magnetic moments (?M) in FePS3. The interface favors AFM coupling, and thus the reversal of ?M of the interfacial FePS3 leads to the polarity-reversal of EB. Moreover, the EB can be extended to the bare Fe3GaTe2 region of the Fe3GaTe2 flake partially covered by FePS3. This work provides opportunities for a deeper understanding of the EB effect and opens a new route toward constructing novel spintronic devices.

権利情報:

キーワード: Exchange bias, spintronic devices, FePS3/Fe3GaTe2

刊行年月日: 2024-11-04

出版者: Wiley

掲載誌:

  • Advanced Science (ISSN: 21983844) vol. 11 issue. 48

研究助成金:

  • National Natural Science Foundation of China 92065206
  • National Natural Science Foundation of China 52372011
  • National Natural Science Foundation of China U22A20123
  • National Natural Science Foundation of China 12304042
  • National Key Research and Development Program of China 2022YFA1602704
  • Natural Science Foundation of Shandong Province ZR2023ZD10
  • Natural Science Foundation of Shandong Province ZR2022MF228
  • Basic and Applied Basic Research Foundation of Guangdong Province 2023A1515110508

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1002/advs.202409210

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更新時刻: 2025-02-06 12:30:38 +0900

MDRでの公開時刻: 2025-02-06 12:30:38 +0900

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