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説明:

Integration of graphene and hexagonal boron nitride (hBN) in lateral heterostructures has provided a route to broadly engineer the material properties by quantum confinement of electrons or introduction of novel electronic and magnetic states at the interface. In this work we demonstrate lateral heteroepitaxial growth of graphene nanoribbons (GNRs) passivated by hBN using high-temperature molecular beam epitaxy (HT-MBE) to grow graphene in oriented hBN trenches formed ex-situ by catalytic nanoparticle etching. High resolution atomic force microscopy (AFM) reveals that graphene nanoribbons grow epitaxially from the etched hBN edges, and merge to form a graphene nanoribbon network passivated by hBN. Using conductive AFM we probe the nanoscale electrical properties of the nanoribbons and observe quasiparticle interference patterns caused by intervalley scattering at the graphene/hBN interface, which carries implications for the potential transport characteristics of hBN passivated GNR devices.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Graphene nanoribbons, lateral heteroepitaxial growth, molecular beam epitaxy

刊行年月日: 2023-07-01

出版者: IOP Publishing

掲載誌:

• 2D Materials (ISSN: 20531583) vol. 10 issue. 3 035035

研究助成金:

• Engineering and Physical Sciences Research Council EP/K040243/1

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1088/2053-1583/acdefc

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更新時刻: 2025-02-14 12:30:41 +0900

MDRでの公開時刻: 2025-02-14 12:30:41 +0900