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TiN/LaドープHf₀.₅Zr₀.₅O₂/TiN強誘電体キャパシタにおいて、分極に依存した酸素空孔分布と酸素空孔跡の相関をオペランド硬X線光電子分光法を用いて明らかにした。

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  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in W. Hamouda, Y. Yamashita, S. Ueda, S. Matzen, O. Renault, F. Mehmood, T. Mikolajick, U. Schroeder, N. Barrett; Electron trapping/detrapping at oxygen vacancies and imprint evolution in La-doped Hf0.5Zr0.5O2 ferroelectric capacitors probed by hard x-ray photoelectron spectroscopy. Appl. Phys. Lett. 3 November 2025; 127 (18): 182902 and may be found at https://doi.org/10.1063/5.0288835.

Keyword: Hf0.5Zr0.5O2, HAXPES, operando

Date published: 2025-11-03

Publisher: AIP Publishing

Journal:

• Applied Physics Letters (ISSN: 00036951) vol. 127 issue. 18 182902

Funding:

• Horizon 2020 Framework Programme 780302

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5901

First published URL: https://doi.org/10.1063/5.0288835

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Updated at: 2025-11-13 12:30:12 +0900

Published on MDR: 2025-11-13 12:25:53 +0900