Electrical Interrogation of Thickness‐Dependent Multiferroic Phase Transitions in the 2D Antiferromagnetic Semiconductor NiI            <sub>2</sub>

Dmitry Lebedev; Jonathan Tyler Gish; Ethan Skyler Garvey; Teodor Kosev Stanev; Junhwan Choi; Leonidas Georgopoulos; Thomas Wei Song; Hong Youl Park; Kenji Watanabe; Takashi Taniguchi; Nathaniel Patrick Stern; Vinod Kumar Sangwan; Mark Christopher Hersam

doi:10.1002/adfm.202212568

Journal article Electrical Interrogation of Thickness‐Dependent Multiferroic Phase Transitions in the 2D Antiferromagnetic Semiconductor NiI ₂

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Dmitry Lebedev, Jonathan Tyler Gish, Ethan Skyler Garvey, Teodor Kosev Stanev, Junhwan Choi, Leonidas Georgopoulos, Thomas Wei Song, Hong Youl Park, Kenji Watanabe, Takashi Taniguchi, Nathaniel Patrick Stern, Vinod Kumar Sangwan, Mark Christopher Hersam. Electrical Interrogation of Thickness‐Dependent Multiferroic Phase Transitions in the 2D Antiferromagnetic Semiconductor NiI ₂. Advanced Functional Materials. 2023, 33 (12), 2212568. https://doi.org/10.1002/adfm.202212568

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(abstract)

Two-dimensional (2D) van der Waals magnets are promising materials for various spintronics applications.1 In particular, 2D antiferromagnetic materials are of significant interest as they are robust with the application of external magnetic field, and allow for faster writing frequencies compared to ferromagnets.2 However, the lack of macroscopic magnetization significantly complicates their studies, and thus magneto-electrical measurements are proposed for detection and control of magnetic order.2 Additionally, the majority of 2D van der Waals magnets are ambient reactive and insulating, which significantly complicates the device fabrication and limits the device geometry to two-terminal tunneling devices. In this manuscript, we propose a protocol for fabricating devices out of the ambient reactive antiferromagnet NiI2, revealing gate-tunable semiconducting transport down to 1.7 K. This enabled the electrical detection of the multiferroic phase transition down to monolayer thickness. The fabrication of ambient stable NiI2 Hall-bar devices facilitated characterization of low temperature magnetotransport, revealing anisotropic magnetoresistance.

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Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International

Keyword: 2D magnetic materials, antiferromagnetic order, NiI2

Date published: 2023-01-12

Publisher: Wiley

Journal:

Advanced Functional Materials (ISSN: 16163028) vol. 33 issue. 12 2212568

Funding:

Northwestern University DMR‐1720139
Office of Naval Research N00014‐19‐1‐2297
U.S. Department of Energy DE‐SC0019356
National Science Foundation DMR‐1905986
National Science Foundation DMR‐2004420
Japan Society for the Promotion of Science 19H05790
Japan Society for the Promotion of Science 20H00354
Japan Society for the Promotion of Science 21H05233

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1002/adfm.202212568

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Updated at: 2025-02-14 12:31:38 +0900

Published on MDR: 2025-02-14 12:31:38 +0900

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