Andrew Seredinski
;
Anne W. Draelos
;
Ethan G. Arnault
;
Ming-Tso Wei
;
Hengming Li
;
Tate Fleming
;
Kenji Watanabe
(National Institute for Materials Science
)
;
Takashi Taniguchi
(National Institute for Materials Science
)
;
François Amet
;
Gleb Finkelstein
Description:
(abstract)We present a study of a graphene-based Josephson junction with dedicated side gates carved from the same sheet of graphene as the junction itself. These side gates are highly efficient, and allow us to modulate carrier density along either edge of the junction in a wide range. In particular, in magnetic fields in the $1-2$ Tesla range, we are able to populate the next Landau level, resulting in Hall plateaus with conductance that differs from the bulk filling factor. When counter-propagating quantum Hall edge states are introduced along either edge, we observe supercurrent localized along that edge of the junction. Here we study these supercurrents as a function of magnetic field and carrier density.
Rights:
Keyword: Graphene-based Josephson junction, side gates, supercurrent
Date published: 2019-09-06
Publisher: American Association for the Advancement of Science (AAAS)
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1126/sciadv.aaw8693
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Updated at: 2025-02-23 22:50:31 +0900
Published on MDR: 2025-02-23 22:50:31 +0900
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