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説明:

We present a study of a graphene-based Josephson junction with dedicated side gates carved from the same sheet of graphene as the junction itself. These side gates are highly efficient, and allow us to modulate carrier density along either edge of the junction in a wide range. In particular, in magnetic fields in the $1-2$ Tesla range, we are able to populate the next Landau level, resulting in Hall plateaus with conductance that differs from the bulk filling factor. When counter-propagating quantum Hall edge states are introduced along either edge, we observe supercurrent localized along that edge of the junction. Here we study these supercurrents as a function of magnetic field and carrier density.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Graphene-based Josephson junction, side gates, supercurrent

刊行年月日: 2019-09-06

出版者: American Association for the Advancement of Science (AAAS)

掲載誌:

• Science Advances (ISSN: 23752548) vol. 5 issue. 9 eaaw8693

研究助成金:

• National Science Foundation ECCS-1610213
• National Science Foundation DMR-1743907
• Army Research Office W911NF16-1-0122
• Army Research Office W911NF-16-1-0132
• Division of Materials Sciences and Engineering DE-SC0002765
• Japan Society for the Promotion of Science JP15K21722
• Ministry of Education, Culture, Sports, Science, and Technology
• Japan Society for the Promotion of Science Grant-in-Aid for Scientific Research A (No. 26248061)
• Japan Society for the Promotion of Science Innovative Areas Nano Informatics (No. 25106006)

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1126/sciadv.aaw8693

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更新時刻: 2025-02-23 22:50:31 +0900

MDRでの公開時刻: 2025-02-23 22:50:31 +0900