Ryo Nanae
;
Satsuki Kitamura
;
Yih‐Ren Chang
;
Kaito Kanahashi
;
Tomonori Nishimura
;
Redhwan Moqbel
;
Kung‐Hsuan Lin
;
Mina Maruyama
;
Yanlin Gao
;
Susumu Okada
;
Kai Qi
;
Jui‐Han Fu
;
Vincent Tung
;
Takashi Taniguchi
(National Institute for Materials Science)
;
Kenji Watanabe
(National Institute for Materials Science)
;
Kosuke Nagashio
Description:
(abstract)The bulk photovoltaic effect (BPVE) in ferroelectrics, wherein spontaneous polarization can be reversed within crystals lacking centrosymmetry, encompasses the significant contribution of ferroelectric domain walls (DWs), known as DW-PVE. Nevertheless, the separation between intrinsic BPVE within the domain and DW-PVE remains unexplored in two-dimensional (2D) ferroelectrics, notwithstanding its significant importance. In this study, we have successfully grown sizable crystals of 2D ferroelectric SnS, facilitating comprehensive yet intricate examination of domain configurations utilizing polarized optical microscopy and piezoresponse force microscopy. By properly selecting the large ferroelectric single domain within SnS crystals, uniform intrinsic BPVE across the domain was unequivocally demonstrated. Furthermore, to further enhance intrinsic BPVE, manipulation of strain poling increased photocurrent, suggesting that locally distributed polarizations due to imperfection introduced in SnS crystals are aligned by strain. These results will offer a new avenue for rigorous comprehension of DW- PVE in 2D ferroelectrics.
Rights:
Keyword: bulk photovoltaic effect (BPVE) , 2D ferroelectrics , SnS
Date published: 2024-07-02
Publisher: Wiley
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1002/adfm.202406140
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Updated at: 2026-02-16 17:33:27 +0900
Published on MDR: 2026-02-10 09:14:31 +0900
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