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説明:

Magnetic stabilization of the ferromagnetic layers of magnetoresistive elements is a key technological requirement for highly sensitive and accurate magnetic sensors. Here, we report on a tunnel magnetoresistive (TMR) sensor wherein the free layer (FL) magnetization is stabilized by combining exchange bias, noncollinear interlayer exchange coupling through a RuFe spacer, and orange-peel ferromagnetic coupling. This method facilitates the stabilization of the FL magnetization over a wide range of noncollinear angles with respect to the pinning direction by controlling the composition of the RuFe spacer. Moreover, the uniaxial anisotropy induced in the FL by annealing plays an important role in the resistance–magnetic field (R–H) curve, which was studied both experimentally and through simulation. The TMR devices exhibited negligible hysteresis even in the major R–H loops, which is promising for magnetic field-sensing applications.

権利情報:

• In Copyright
  

  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Prabhanjan D. Kulkarni, Tomoya Nakatani; Tunnel magnetoresistive sensors with non-hysteretic resistance–magnetic field curves using noncollinear interlayer exchange coupling through RuFe spacers. Appl. Phys. Lett. 14 October 2024; 125 (16): 162405, and may be found at https://doi.org/10.1063/5.0231451.

キーワード: tunnel magnetoresistance, interlayer exchange coupling, magnetic sensor, magnetic hysteresis

刊行年月日: 2024-10-14

出版者: American Institute of Physics

掲載誌:

• APPLIED PHYSICS LETTERS (ISSN: 10773118) vol. 125 issue. 16 162405

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4947

公開URL: https://doi.org/10.1063/5.0231451

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更新時刻: 2024-11-13 12:30:11 +0900

MDRでの公開時刻: 2024-11-13 12:30:12 +0900