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In this work, we investigate the adsorption and desorption of the O-termination and H-termination diamonds by in-situ measuring the shift of the resonance frequency of single-crystal diamond (SCD) microelectromechanical system (MEMS) resonators (Fig. 1(a)) in a high-vacuum chamber under different temperatures [4,5]. The different adsorption and desorption process of the O- and H-terminated diamond surface is disclosed at different temperatures. It is revealed that the adsorbates on the O-terminated diamond surface desorbs markedly between 373 K and 723 K and completes desorption at 933 K, as shown in Fig. 1(b). While the adsorbates on the H-terminated diamond desorb gradually between 363 K and 573 K and desorb dramatically between 573 K and 693 K (Fig. 1(c)). Based on the shift of the resonator frequency, the desorbed mass of the adsorbates on the O-terminated and H-terminated diamond surface is calculated to be 2.2 pg and 6.6 pg, respectively, corresponding to the equivalent thickness of the adsorption layer of 0.4 nm and 0.9 nm, respectively. Moreover, the surface conductivity of the H-terminated diamond drops by 6 orders of magnitude between 298 K and 723 K (Fig. 1(d)). These results disclosed by diamond MEMS provide an alternate insight into the surface nature of the O- and H-terminated diamond surface.

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キーワード: Diamond, MEMS

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会議: The 18th International Conference on New Diamond and Nano Carbons (2025-05-11 - 2025-05-15)

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原稿種別: 論文以外のデータ

MDR DOI: https://doi.org/10.48505/nims.5491

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更新時刻: 2025-05-22 08:30:23 +0900

MDRでの公開時刻: 2025-05-22 08:23:07 +0900