Takanori Mimura
;
Yuma Takahashi
;
Takahisa Shiraishi
;
Masanori Kodera
;
Reijiro Shimura
;
Keisuke Ishihama
;
Kazuki Okamoto
;
Hiroki Moriwake
;
Ayako Taguchi
;
Takao Shimizu
(National Institute for Materials Science)
;
Yasuhiro Fujii
;
Akitoshi Koreeda
;
Hiroshi Funakubo
Description:
(abstract)Phase identification of 850 nm thick 7%YO1.5–93%HfO2 films was carried out by analyzing both the surface and cross-sectional Raman spectra together with conventional X-ray diffraction (XRD). Preparation of 7%YO1.5–93%HfO2 films was conducted by deposition at room temperature on Pt-coated (100)Si substrates by pulsed laser deposition and postheat-treatment at 600–1100 °C under atmospheric N2 flow. The cross-sectional Raman spectra changed with the postheat-treatment temperature in accordance with the crystal structure determined by XRD measurements. Moreover, surface Raman analysis revealed that the crystalline phase transformed from the tetragonal phase (P42/nmc) to the orthorhombic phase (Pca21) when an electric field was applied. These data clearly show that Raman spectroscopy is a powerful tool for detecting the constituent phase with a spatial resolution on the order of several micrometers. In addition, a good signal-to-noise ratio was obtained from the cross-sectional Raman spectrum of 850 nm thick 7%YO1.5–93%HfO2 films, indicating promise for future measurements of the strain state and phase distribution along the thickness direction using this good spatial resolution.
Rights:
This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in ACS Applied Electronic Materials, copyright © 2024 American Chemical Society after peer review. To access the final edited and published work see https://doi.org/10.1021/acsaelm.4c00134.
Keyword: Raman spectroscopy, field-induced phase transition, Multiple phase, HfO2-based ferroelectric film
Date published: 2024-04-23
Publisher: American Chemical Society (ACS)
Journal:
Funding:
Manuscript type: Author's version (Submitted manuscript)
MDR DOI: https://doi.org/10.48505/nims.5210
First published URL: https://doi.org/10.1021/acsaelm.4c00134
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Updated at: 2024-12-24 13:59:01 +0900
Published on MDR: 2024-12-24 13:59:01 +0900
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