Takanori Mimura
;
Yuma Takahashi
;
Takahisa Shiraishi
;
Masanori Kodera
;
Reijiro Shimura
;
Keisuke Ishihama
;
Kazuki Okamoto
;
Hiroki Moriwake
;
Ayako Taguchi
;
Takao Shimizu
(National Institute for Materials Science)
;
Yasuhiro Fujii
;
Akitoshi Koreeda
;
Hiroshi Funakubo
説明:
(abstract)Phase identification of 850 nm thick 7%YO1.5–93%HfO2 films was carried out by analyzing both the surface and cross-sectional Raman spectra together with conventional X-ray diffraction (XRD). Preparation of 7%YO1.5–93%HfO2 films was conducted by deposition at room temperature on Pt-coated (100)Si substrates by pulsed laser deposition and postheat-treatment at 600–1100 °C under atmospheric N2 flow. The cross-sectional Raman spectra changed with the postheat-treatment temperature in accordance with the crystal structure determined by XRD measurements. Moreover, surface Raman analysis revealed that the crystalline phase transformed from the tetragonal phase (P42/nmc) to the orthorhombic phase (Pca21) when an electric field was applied. These data clearly show that Raman spectroscopy is a powerful tool for detecting the constituent phase with a spatial resolution on the order of several micrometers. In addition, a good signal-to-noise ratio was obtained from the cross-sectional Raman spectrum of 850 nm thick 7%YO1.5–93%HfO2 films, indicating promise for future measurements of the strain state and phase distribution along the thickness direction using this good spatial resolution.
権利情報:
キーワード: Raman spectroscopy, field-induced phase transition, Multiple phase, HfO2-based ferroelectric film
刊行年月日: 2024-04-23
出版者: American Chemical Society (ACS)
掲載誌:
研究助成金:
原稿種別: 査読前原稿 (Author's original)
MDR DOI: https://doi.org/10.48505/nims.5210
公開URL: https://doi.org/10.1021/acsaelm.4c00134
関連資料:
その他の識別子:
連絡先:
更新時刻: 2024-12-24 13:59:01 +0900
MDRでの公開時刻: 2024-12-24 13:59:01 +0900
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最初20231122_raman_HfO2.pdf
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