論文 Phase Identification of 850 nm Thick 7%YO1.5–93%HfO2 Films by Surface and Cross-Sectional Raman Spectroscopies

Takanori Mimura ; Yuma Takahashi ; Takahisa Shiraishi ; Masanori Kodera ; Reijiro Shimura ; Keisuke Ishihama ; Kazuki Okamoto ; Hiroki Moriwake ; Ayako Taguchi ; Takao Shimizu SAMURAI ORCID (National Institute for Materials Science) ; Yasuhiro Fujii ; Akitoshi Koreeda ; Hiroshi Funakubo

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引用
Takanori Mimura, Yuma Takahashi, Takahisa Shiraishi, Masanori Kodera, Reijiro Shimura, Keisuke Ishihama, Kazuki Okamoto, Hiroki Moriwake, Ayako Taguchi, Takao Shimizu, Yasuhiro Fujii, Akitoshi Koreeda, Hiroshi Funakubo. Phase Identification of 850 nm Thick 7%YO1.5–93%HfO2 Films by Surface and Cross-Sectional Raman Spectroscopies. ACS Applied Electronic Materials. 2024, 6 (4), 2500-2506. https://doi.org/10.1021/acsaelm.4c00134
SAMURAI

説明:

(abstract)

Phase identification of 850 nm thick 7%YO1.5–93%HfO2 films was carried out by analyzing both the surface and cross-sectional Raman spectra together with conventional X-ray diffraction (XRD). Preparation of 7%YO1.5–93%HfO2 films was conducted by deposition at room temperature on Pt-coated (100)Si substrates by pulsed laser deposition and postheat-treatment at 600–1100 °C under atmospheric N2 flow. The cross-sectional Raman spectra changed with the postheat-treatment temperature in accordance with the crystal structure determined by XRD measurements. Moreover, surface Raman analysis revealed that the crystalline phase transformed from the tetragonal phase (P42/nmc) to the orthorhombic phase (Pca21) when an electric field was applied. These data clearly show that Raman spectroscopy is a powerful tool for detecting the constituent phase with a spatial resolution on the order of several micrometers. In addition, a good signal-to-noise ratio was obtained from the cross-sectional Raman spectrum of 850 nm thick 7%YO1.5–93%HfO2 films, indicating promise for future measurements of the strain state and phase distribution along the thickness direction using this good spatial resolution.

権利情報:

  • In Copyright
    This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in ACS Applied Electronic Materials, copyright © 2024 American Chemical Society after peer review. To access the final edited and published work see https://doi.org/10.1021/acsaelm.4c00134.

キーワード: Raman spectroscopy, field-induced phase transition, Multiple phase, HfO2-based ferroelectric film

刊行年月日: 2024-04-23

出版者: American Chemical Society (ACS)

掲載誌:

  • ACS Applied Electronic Materials (ISSN: 26376113) vol. 6 issue. 4 p. 2500-2506

研究助成金:

  • Ministry of Education, Culture, Sports, Science and Technology JPJ011438
  • Ministry of Education, Culture, Sports, Science and Technology JPMXP1122683430
  • Japan Society for the Promotion of Science 19H00758
  • Japan Society for the Promotion of Science 21H01617
  • Japan Society for the Promotion of Science 22K18307
  • Japan Society for the Promotion of Science 23K13364

原稿種別: 査読前原稿 (Author's original)

MDR DOI: https://doi.org/10.48505/nims.5210

公開URL: https://doi.org/10.1021/acsaelm.4c00134

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更新時刻: 2024-12-24 13:59:01 +0900

MDRでの公開時刻: 2024-12-24 13:59:01 +0900

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