Article Microstructure Optimization of Thermoelectric τ1-Al2Fe3Si3 via Graded Temperature Heat Treatments

Ryuta Yurishima ; Yoshiki Takagiwa ORCID (National Institute for Materials ScienceROR) ; Ayako Ikeda SAMURAI ORCID (National Institute for Materials ScienceROR) ; Teruyuki Ikeda

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Citation
Ryuta Yurishima, Yoshiki Takagiwa, Ayako Ikeda, Teruyuki Ikeda. Microstructure Optimization of Thermoelectric τ1-Al2Fe3Si3 via Graded Temperature Heat Treatments. Materials. 2024, 17 (23), 5899. https://doi.org/10.3390/ma17235899
SAMURAI

Description:

(abstract)

To investigate the relationship between microstructure, chemical composition, and thermoelectric properties, we have applied graded temperature heat treatments to recently developed τ1-Al2Fe3Si3-based thermoelectric (FAST) materials formed by a peritectic reaction. We investigated microstructures, chemical compositions, and Seebeck coefficients as continuous functions of heat treatment temperature. The τ1 phase can become p- and n-type semiconductors without doping by changing the Al/Si ratio. The Seebeck coefficient was maximized, exceeding |S| > 140 μVK−1 for both p- and n-type materials, by heat treatment at 1173 K for 24 h through microstructural opti-mization. These results show that combining the graded temperature heat treatments and spatial mapping measurements of thermoelectric properties gives effective routes to determine the suitable heat treatment temperature for materials with multiphase microstructure.

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Keyword: graded temperature heat treatments, thermoelectric properties, microstructure, phase diagram

Date published: 2024-12-02

Publisher: MDPI AG

Journal:

  • Materials (ISSN: 19961944) vol. 17 issue. 23 5899

Funding:

  • New Energy and Industrial Technology Development Organization JPNP14004
  • JSPS KAKENHI 20K15054
  • NIMS Joint Research Hub Program 2024-095

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.3390/ma17235899

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Updated at: 2025-01-07 08:30:33 +0900

Published on MDR: 2025-01-07 08:30:34 +0900

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