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Description:

Owing to the evolution of data-driven technologies, including the large language models, generative artificial intelligence, autonomous driving, and the internet of things requires advanced memory technology. However, conventional memory device structures and fabrication process have significant limitations for high-density integration. Herein, this study reports the monolithically-integrated 1-selector and 1-resistive (1S1R) synaptic memory in van der Waals (vdW) heterostructure, which overcomes the conventional limitations of device integration technologies. Single-step direct synthesis of vdW heterostructure and its corresponding 1S1R cell is fabricated via plasma-enhanced lattice-distortion. Scanning-transmission electron microscopy, and X-ray photoelectron spectroscopy are correlatively applied to observe the effects of plasma-enhanced nano-crystallization of bulk vdW VSe2. Furthermore, bipolar resistive switching dynamics have been spatially resolved with conductive atomic force microscopy. Furthermore, the artificial vdW heterostructure exhibits the synaptic functionality with interfacial charge accumulation at the 2D/3D interface, enabling linear weight updates across multiple resistance states with minimal nonlinearity. In conclusion, it envision that the monolithically-integrated 1S1R cell can offers a systematic device platform for next-generation vdW electronics and its corresponding monolithic 3D integration.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: synaptic memory
, van der Waals heterostructure, nano-crystallization

Date published: 2025-08-26

Publisher: Wiley

Journal:

• Advanced Science (ISSN: 21983844) vol. 12 issue. 43 e10961

Funding:

• Institute for Basic Science IBS‐R027‐D1
• Ministry of Trade, Industry and Energy 1415187508
• Ministry of Trade, Industry and Energy 1415187508
• Ministry of Trade, Industry and Energy 1415187584
• National Research Foundation
• National Research Foundation of Korea RS‐2024‐00437142
• Korea Semiconductor Research Consortium RS‐2023‐00235156
• Ministry of Trade, Industry and Energy 1415187508
• Ministry of Trade, Industry and Energy 1415187508
• Ministry of Trade, Industry and Energy 1415187584

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1002/advs.202510961

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Updated at: 2026-04-03 14:54:05 +0900

Published on MDR: 2026-04-03 16:27:42 +0900