K. Parto
;
S. I. Azzam
;
N. Lewis
;
S. D. Patel
;
S. Umezawa
;
K. Watanabe
(National Institute for Materials Science)
;
T. Taniguchi
(National Institute for Materials Science)
;
G. Moody
Description:
(abstract)Optically active defects in 2D materials, such as hexagonal boron nitride (hBN) and transition metal dichalcogenides (TMDs), have proven to be an attractive class of single-photon emitters with high brightness, room-temperature op- eration, site-specific engineering of emitter arrays, tunability with external strain and electric fields, and compatibility with a wide variety of host material platforms. In this work, we develop a novel approach to precisely align and embed hBN and TMDs within background-free silicon nitride (SiN) microring resonators. Through the Purcell effect, high- purity hBN emitters exhibit a cavity-enhanced coupling efficiency of 33 ± 12% at room temperature, which exceeds the theoretical limit for cavity-free waveguide-emitter coupling and previous demonstrations by an order-of-magnitude. This work demonstrates the first successful integration of 2D material quantum emitters with microresonators in a foundry-compatible silicon photonics platform, opening a path for scalable quantum photonic chips with on-demand single-photon sources.
Rights:
Keyword: Optically active defects, single-photon emitters, microring resonators
Date published: 2022-12-14
Publisher: American Chemical Society (ACS)
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1021/acs.nanolett.2c03151
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Updated at: 2025-02-26 12:31:08 +0900
Published on MDR: 2025-02-26 12:31:08 +0900
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