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説明:

Optically active defects in 2D materials, such as hexagonal boron nitride (hBN) and transition metal dichalcogenides (TMDs), have proven to be an attractive class of single-photon emitters with high brightness, room-temperature op- eration, site-specific engineering of emitter arrays, tunability with external strain and electric fields, and compatibility with a wide variety of host material platforms. In this work, we develop a novel approach to precisely align and embed hBN and TMDs within background-free silicon nitride (SiN) microring resonators. Through the Purcell effect, high- purity hBN emitters exhibit a cavity-enhanced coupling efficiency of 33 ± 12% at room temperature, which exceeds the theoretical limit for cavity-free waveguide-emitter coupling and previous demonstrations by an order-of-magnitude. This work demonstrates the first successful integration of 2D material quantum emitters with microresonators in a foundry-compatible silicon photonics platform, opening a path for scalable quantum photonic chips with on-demand single-photon sources.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Optically active defects, single-photon emitters, microring resonators

刊行年月日: 2022-12-14

出版者: American Chemical Society (ACS)

掲載誌:

• Nano Letters (ISSN: 15306984) vol. 22 issue. 23 p. 9748-9756

研究助成金:

• Air Force Office of Scientific Research FA9550-21-1-0257
• Japan Society for the Promotion of Science 19H05790
• Japan Society for the Promotion of Science 20H00354
• Japan Society for the Promotion of Science 21H05233
• Division of Electrical, Communications and Cyber Systems ECCS-2032272
• Division of Materials Research DMR-1906325

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1021/acs.nanolett.2c03151

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更新時刻: 2025-02-26 12:31:08 +0900

MDRでの公開時刻: 2025-02-26 12:31:08 +0900