Justin Boddison-Chouinard
;
Alex Bogan
;
Pedro Barrios
;
Jean Lapointe
;
Kenji Watanabe
(National Institute for Materials Science)
;
Takashi Taniguchi
(National Institute for Materials Science)
;
Jarosław Pawłowski
;
Daniel Miravet
;
Maciej Bieniek
;
Pawel Hawrylak
;
Adina Luican-Mayer
;
Louis Gaudreau
Description:
(abstract)We have investigated charge tunable devices based on WSe2 and WS2 monolayers encapsulated in hexag- onal boron nitride. In addition to the well-known radiative recombination of neutral and charged excitons, stationary photoluminescence measurements highlight a weaker-intensity optical transition that appears when the monolayer is electrostatically doped with electrons. We have carried out a detailed characterization of this photoluminescence line based on its doping dependence, its variation as a function of the optical excitation power, its polarization characteristics, and its g factor measured under longitudinal magnetic field. We interpret this luminescence peak as an impurity-assisted radiative recombination of the intervalley negatively charged exciton (triplet trion). In addition to the standard direct recombination, the triplet trion has a second recom- bination channel triggered by elastic scattering off the short-range impurity potential. The energy difference between the emitted photons from these two possible recombination processes of the same triplet trion is simply the single-particle conduction band spin-orbit splitting Dc . We measure Dc = 12 ± 0.5 meV for the WSe2 monolayer and Dc = 12 ± 1 meV for the WS2 monolayer. These results demonstrate the importance of second-order exciton recombination processes in transition-metal dichalcogenide structures.
Rights:
Keyword: Gate-defined quantum confined channels, conductance quantization, transition metal dichalcogenide
Date published: 2023-07-15
Publisher: Springer Science and Business Media LLC
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1038/s41699-023-00407-y
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Updated at: 2025-02-23 22:47:42 +0900
Published on MDR: 2025-02-23 22:47:42 +0900
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