論文 Giant Light Emission Enhancement in Strain-Engineered InSe/MS2 (M = Mo or W) van der Waals Heterostructures

Elena Blundo ; Federico Tuzi ; Marzia Cuccu ; Michele Re Fiorentin ; Giorgio Pettinari ; Atanu Patra ; Salvatore Cianci ; Zakhar R. Kudrynskyi ; Marco Felici ; Takashi Taniguchi SAMURAI ORCID (National Institute for Materials Science) ; Kenji Watanabe SAMURAI ORCID (National Institute for Materials Science) ; Amalia Patanè ; Maurizia Palummo ; Antonio Polimeni

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Elena Blundo, Federico Tuzi, Marzia Cuccu, Michele Re Fiorentin, Giorgio Pettinari, Atanu Patra, Salvatore Cianci, Zakhar R. Kudrynskyi, Marco Felici, Takashi Taniguchi, Kenji Watanabe, Amalia Patanè, Maurizia Palummo, Antonio Polimeni. Giant Light Emission Enhancement in Strain-Engineered InSe/MS2 (M = Mo or W) van der Waals Heterostructures. Nano Letters. 2025, 25 (9), 3375-3382. https://doi.org/10.1021/acs.nanolett.4c04252

説明:

(abstract)

Two-dimensional crystals stack together through weak van der Waals (vdW) forces, offering unlim- ited possibilities to play with layer number, order and twist angle in vdW heterostructures (HSs). The realisation of high-performance optoelectronic devices, however, requires the achievement of specific band alignments, k-space matching between conduction band minima and valence band maxima, as well as efficient charge transfer between the constituent layers. Fine tuning mecha- nisms to design ideal HSs are lacking. Here we show that layer selective strain engineering can be exploited as an extra degree of freedom in vdW HSs, to engineer the band alignment and optical properties. To that end, strain is selectively applied to MS2 (M=Mo,W) monolayers in InSe/MS2 HSs. Indeed, InSe exhibits exceptional transport properties and thickness-tunable band gap ranging from near UV to near IR. However, it is characterised by a relatively weak photoluminescence (PL) efficiency. The application of strain to MS2 monolayers in InSe/MS2 HSs triggers a giant PL en- hancement of InSe, by two orders of magnitude. Resonant PL excitation measurements, supported by first-principle calculations, provide evidence of direct charge transfer from the strained MS2 MLs toward InSe. This significant PL enhancement achieved for InSe widens its range of applications for optoelectronics.

権利情報:

キーワード: van der Waals heterostructures
, strain engineering
, photoluminescence enhancement


刊行年月日: 2025-03-05

出版者: American Chemical Society (ACS)

掲載誌:

  • Nano Letters (ISSN: 15306984) vol. 25 issue. 9 p. 3375-3382

研究助成金:

  • Ministry of Education, Culture, Sports, Science and Technology World Premier International Research Center Initia
  • Japan Society for the Promotion of Science 20H00354
  • Japan Society for the Promotion of Science 23H02052
  • Ministero dell'Universit? e della Ricerca 20222HNMYE
  • Ministero dell'Universit? e della Ricerca ICSC
  • Ministero dell'Universit? e della Ricerca PE0000023
  • Horizon 2020 Framework Programme 101017733-NQSTI
  • Nottingham University Nottingham Research Fellowship
  • CINECA ISCRA

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1021/acs.nanolett.4c04252

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更新時刻: 2026-03-03 08:30:04 +0900

MDRでの公開時刻: 2026-03-02 17:20:29 +0900

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