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Description:

Thin-film single crystals of organic semiconductors represent a emerging class of materials for flexible printed electronic devices, including organic field-effect transistors and strain sensors. Their potential arises from the demonstration of high-mobility band transport, which significantly enhances both device performance and operational reliability. However, achieving stable and precise control over carrier concentration through chemical doping remains a fundamental challenge, restricting device architecture and broader application. In this study, the challenge is addressed by improving the environmental and thermal stability of chemically doped organic single crystals through the strategic selection of dopant anions. Specifically, ion-exchange doping using the bulky tetrakis(3,5-bis(trifluoromethyl)phenyl)borate (BArF) anion resulted in high electrical conductivity and exceptional stability under ambient conditions at 80 °C. The doped single crystals further exhibited excellent strain sensitivity, maintaining consistent strain sensing performance over 100 000 bending cycles, with conductivity drift suppressed to the order of ppm per hour under ambient conditions.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: organic semiconductor, strain sensor

Date published: 2025-09-18

Publisher: Wiley

Journal:

• Advanced Functional Materials (ISSN: 1616301X) vol. 36 issue. 13 e18055

Funding:

• Japan Society for the Promotion of Science JP22H04959
• Japan Science and Technology Agency JPMJCR21O3
• Japan Science and Technology Agency JPMJFR236R

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1002/adfm.202518055

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Updated at: 2026-02-14 12:30:06 +0900

Published on MDR: 2026-02-14 09:52:12 +0900