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説明:

Thin-film single crystals of organic semiconductors represent a emerging class of materials for flexible printed electronic devices, including organic field-effect transistors and strain sensors. Their potential arises from the demonstration of high-mobility band transport, which significantly enhances both device performance and operational reliability. However, achieving stable and precise control over carrier concentration through chemical doping remains a fundamental challenge, restricting device architecture and broader application. In this study, the challenge is addressed by improving the environmental and thermal stability of chemically doped organic single crystals through the strategic selection of dopant anions. Specifically, ion-exchange doping using the bulky tetrakis(3,5-bis(trifluoromethyl)phenyl)borate (BArF) anion resulted in high electrical conductivity and exceptional stability under ambient conditions at 80 °C. The doped single crystals further exhibited excellent strain sensitivity, maintaining consistent strain sensing performance over 100 000 bending cycles, with conductivity drift suppressed to the order of ppm per hour under ambient conditions.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: organic semiconductor, strain sensor

刊行年月日: 2025-09-18

出版者: Wiley

掲載誌:

• Advanced Functional Materials (ISSN: 1616301X) vol. 36 issue. 13 e18055

研究助成金:

• Japan Society for the Promotion of Science JP22H04959
• Japan Science and Technology Agency JPMJCR21O3
• Japan Science and Technology Agency JPMJFR236R

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1002/adfm.202518055

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更新時刻: 2026-02-14 12:30:06 +0900

MDRでの公開時刻: 2026-02-14 09:52:12 +0900