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代替タイトル: 相制御ELOによるα-Ga2O3のHVPE成長

説明:

We investigated the effect of mask materials on the epitaxial lateral overgrowth (ELO) characteristics of alpha-Ga2O3 and developed an ELO technique that can markedly suppress abnormal growth and cracking to enable long-term growth on a wide mask, which is necessary to effectively improve the crystal quality. alpha-Ga2O3 islands with a diameter as large as approximately 25 um were grown by the developed ELO technique using polycrystalline kappa-Ga2O3. Transmission electron microscopy observation did not detect dislocations in the outermost part of the islands.

権利情報:

• In Copyright
  

  © 2020 The Japan Society of Applied Physics
  
  This is an author-created, un-copyedited version of an article accepted for publication/published
  in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or
  any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/ab6faf.

キーワード: α-Ga2O3, ELO, HVPE

刊行年月日: 2020-02-01

出版者: IOP Publishing

掲載誌:

• JAPANESE JOURNAL OF APPLIED PHYSICS (ISSN: 00214922) vol. 59 issue. 2 p. 25512-25512

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4359

公開URL: https://doi.org/10.35848/1347-4065/ab6faf

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更新時刻: 2024-01-22 09:41:33 +0900

MDRでの公開時刻: 2024-01-22 12:30:30 +0900