Presentation Au-Ge Eutectic Droplet Formation and Analyses for Selective-Area VLS Growth of Ge Nanowires on Si (111)

Shuya Yamaguchi (RCIQE, Hokkaido University) ; Shuma Yuzawa (RCIQE, Hokkaido University) ; Wipakorn Jevasuwan SAMURAI ORCID (Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Nanostructured Semiconducting Materials Group, National Institute for Materials Science) ; Naoki Fukata SAMURAI ORCID (Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Nanostructured Semiconducting Materials Group, National Institute for Materials Science) ; Shinjiro Hara ORCID (Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Semiconductor Nano-integration Group, National Institute for Materials Science)

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Shuya Yamaguchi, Shuma Yuzawa, Wipakorn Jevasuwan, Naoki Fukata, Shinjiro Hara. Au-Ge Eutectic Droplet Formation and Analyses for Selective-Area VLS Growth of Ge Nanowires on Si (111). https://doi.org/10.48505/nims.5920

Alternative title: Au-Ge Eutectic Droplet Formation and Analyses for Selective-Area VLS Growth of Ge Nanowires on Si (111)

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(abstract)

In our study, we employ electron beam (EB) lithography and lift-off techniques to precisely position Au thin film patterns, aiming to establish site-selective (or selective-area), vertically aligned Ge NW growth via the VLS method using Au catalysts. In this paper, we characterize the behavior of Au catalysts, i.e., Au–Ge eutectic droplets, on the initial stages of selective-area VLS growth of Ge NWs heterogeneously on Si (111) substrates. When GeH₄ was supplied to the circular Au thin film patterns, we observed that the Au patterns absorbed Ge while maintaining their shape by 4 min. At the gas supply time of 7 min, the entire catalyst transformed into an Au–Ge eutectic liquid, and then, subsequently aggregated into a hemispherical form. The BSE analyses also showed that the Ge concentration was possibly high at the center of Au-Ge droplets.

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Keyword: Semiconductor, Chemical Vapor Depsition, VLS, Selective-Area Growth, Nanowires

Conference: The 38th International Microprocesses and Nanotechnology Conference (MNC 2025) (2025-11-17 - 2025-11-20)

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Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5920

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Updated at: 2025-11-21 16:30:07 +0900

Published on MDR: 2025-11-21 16:23:46 +0900

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