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代替タイトル: Au-Ge Eutectic Droplet Formation and Analyses for Selective-Area VLS Growth of Ge Nanowires on Si (111)

説明:

In our study, we employ electron beam (EB) lithography and lift-off techniques to precisely position Au thin film patterns, aiming to establish site-selective (or selective-area), vertically aligned Ge NW growth via the VLS method using Au catalysts. In this paper, we characterize the behavior of Au catalysts, i.e., Au–Ge eutectic droplets, on the initial stages of selective-area VLS growth of Ge NWs heterogeneously on Si (111) substrates. When GeH₄ was supplied to the circular Au thin film patterns, we observed that the Au patterns absorbed Ge while maintaining their shape by 4 min. At the gas supply time of 7 min, the entire catalyst transformed into an Au–Ge eutectic liquid, and then, subsequently aggregated into a hemispherical form. The BSE analyses also showed that the Ge concentration was possibly high at the center of Au-Ge droplets.

権利情報:

• In Copyright
  ©2025 The Japan Society of Applied Physics

キーワード: Semiconductor, Chemical Vapor Depsition, VLS, Selective-Area Growth, Nanowires

会議: The 38th International Microprocesses and Nanotechnology Conference (MNC 2025) (2025-11-17 - 2025-11-20)

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原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5920

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更新時刻: 2025-11-21 16:30:07 +0900

MDRでの公開時刻: 2025-11-21 16:23:46 +0900