Article Crystalline phase dependence of the inverse spin Hall effect in Sb2Te3/CoFeB bilayers

Misako Morota ORCID ; Wipakorn Jevasuwan SAMURAI ORCID ; Hiroyasu Nakayama ORCID ; Naoki Fukata SAMURAI ORCID ; Yuta Saito ORCID

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Citation
Misako Morota, Wipakorn Jevasuwan, Hiroyasu Nakayama, Naoki Fukata, Yuta Saito. Crystalline phase dependence of the inverse spin Hall effect in Sb2Te3/CoFeB bilayers. APL Materials. 2025, 13 (8), 081109. https://doi.org/10.48505/nims.5893

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(abstract)

Sb2Te3 is a layered material with the properties of both a topological insulator and a phase-change material. In this study, to investigate the relationship between the spin current-to-charge current conversion efficiency of Sb2Te3 and its phase, we fabricated Sb2Te3/CoFeB bilayers with varying Sb2Te3 thicknesses. The electromotive force induced at both ends of the bilayer was measured as a result of the scattering of the spin current injected into Sb2Te3 by spin pumping due to ferromagnetic resonance, the so-called inverse spin Hall effect (ISHE). Two different Sb2Te3 phases—crystalline and amorphous—were prepared, and the phase dependence of the ISHE was investigated. The ISHE of the crystalline Sb2Te3 film exhibited a strong dependence on thickness, whereas the amorphous phase showed only a minor variation with thickness. These findings contribute to the development of novel devices that exploit both the charge and spin degrees of freedom in topological insulator-based spintronic applications.

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Keyword: Sb2Te3, phase change material, spin hall effect

Date published: 2025-08-01

Publisher: AIP Publishing

Journal:

  • APL Materials (ISSN: 2166532X) vol. 13 issue. 8 081109

Funding:

  • Japan Society for the Promotion of Science 22H01151
  • Japan Society for the Promotion of Science 23K04576
  • Precursory Research for Embryonic Science and Technology JPMJPR23H6

Manuscript type: Author's original (Submitted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5893

First published URL: https://doi.org/10.1063/5.0276308

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Updated at: 2025-11-12 11:44:25 +0900

Published on MDR: 2025-11-12 16:23:58 +0900

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