Article Reversible Polarity Control in 2D MoTe2 Field‐Effect Transistors for Complementary Logic Gate Applications

Byoung‐Soo Yu ; Wonsik Kim ; Jisu Jang ; Je‐Jun Lee ; Jung Pyo Hong ; Namhee Kwon ; Seunghwan Kim ; Aelim Ha ; Hong‐Kyu Kim ; Jae‐Pyoung Ahn ; Kwangsik Jeong ; Takashi Taniguchi SAMURAI ORCID (National Institute for Materials Science) ; Kenji Watanabe SAMURAI ORCID (National Institute for Materials Science) ; Gunuk Wang ; Jongtae Ahn ; Soohyung Park ; Do Kyung Hwang

Adv Funct Materials - 2024 - Yu - Reversible Polarity Control in 2D MoTe2 Field‐Effect Transistors for Complementary Logic.pdf
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Byoung‐Soo Yu, Wonsik Kim, Jisu Jang, Je‐Jun Lee, Jung Pyo Hong, Namhee Kwon, Seunghwan Kim, Aelim Ha, Hong‐Kyu Kim, Jae‐Pyoung Ahn, Kwangsik Jeong, Takashi Taniguchi, Kenji Watanabe, Gunuk Wang, Jongtae Ahn, Soohyung Park, Do Kyung Hwang. Reversible Polarity Control in 2D MoTe2 Field‐Effect Transistors for Complementary Logic Gate Applications. Advanced Functional Materials. 2024, 34 (41), 2404129. https://doi.org/10.1002/adfm.202404129
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(abstract)

Precise control over polarity in field-effect transistors (FETs) plays a pivotal role in the design and construction of complementary metal–oxide–semiconductor (CMOS) logic circuits. In particular, achieving such precise polarity control in 2D semiconductors is crucial for the further development of advanced electronic applications beyond unit devices. This paper presents a systematic investigation on the reversible transition of carrier types in a 2D MoTe2 semiconductor under different annealing atmospheres. Photoemission spectroscopy and density functional theory (DFT) calculations demonstrate that annealing processes in vacuum and in ambient air induce a modification in the density of states, resulting in alterations in p-type or n-type characteristics. These reversible changes are attributed to the physisorption and elimination of oxygen on the surface of MoTe2. Furthermore, it is found that the device geometry affects the polarity of the transistor. By strategically manipulating both the annealing conditions and the geometric configuration, the n- and p-type unipolar characteristics of MoTe2 FETs are successfully modulated and ultimately demonstrating that the functionality of not only a complementary inverter with a high voltage gain of ≈20, but also more complex logic circuits of NAND and NOR gates.

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Keyword: Polarity control, field-effect transistors, MoTe2

Date published: 2024-05-15

Publisher: Wiley

Journal:

  • Advanced Functional Materials (ISSN: 16163028) vol. 34 issue. 41 2404129

Funding:

  • Korea Institute of Science and Technology 2E32942
  • Korea Institute of Science and Technology 2V09840‐23‐P024
  • Korea Institute of Science and Technology 2V09703
  • National Research Foundation of Korea 2023R1A2C2003985
  • National Research Foundation of Korea 2021M3H4A6A02050353
  • National Research Foundation of Korea 2022M3D1A2095315
  • Changwon National University

Manuscript type: Publisher's version (Version of record)

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First published URL: https://doi.org/10.1002/adfm.202404129

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Updated at: 2025-02-14 12:31:34 +0900

Published on MDR: 2025-02-14 12:31:34 +0900

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