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Description:

Integrating two-dimensional (2D) semiconductors into nanophotonic structures provides a versatile platform for advanced optoelectronic devices. A key challenge in realizing these systems is achieving control over light emission from these materials. In this work, we demon- strate the modulation of photoluminescence (PL) in transition metal dichalcogenides (TMDs) coupled to surface lattice resonances in metal nanoparticle arrays. We show that both the intensity and emission angle of light can be tuned by adjusting the lattice parameters. By ap- plying gate electrodes to electrostatically dope the TMDs coupled with plasmonic lattices, we achieve PL intensity switching exceeding two orders of magnitude at low applied voltages. The integration of gate electrodes with plasmonic lattices represents an important step toward the next generation of electrically tunable and powered nanoscale light sources based on 2D semiconductors.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: photoluminescence control, 2D semiconductors
, plasmonic lattices

Date published: 2025-02-04

Publisher: American Chemical Society (ACS)

Journal:

• ACS Nano (ISSN: 19360851) vol. 19 issue. 4 p. 4731-4738

Funding:

• Eidgen?ssische Technische Hochschule Z?rich ETH-15 19-1
• Ministry of Education, Culture, Sports, Science and Technology
• Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung 200020_192362/1
• Japan Society for the Promotion of Science 21H05233
• Japan Society for the Promotion of Science 23H02052

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1021/acsnano.4c15459

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Updated at: 2026-02-17 08:30:45 +0900

Published on MDR: 2026-02-16 18:00:50 +0900