Antti J. Moilanen
;
Moritz Cavigelli
;
Takashi Taniguchi
(National Institute for Materials Science)
;
Kenji Watanabe
(National Institute for Materials Science)
;
Lukas Novotny
説明:
(abstract)Integrating two-dimensional (2D) semiconductors into nanophotonic structures provides a versatile platform for advanced optoelectronic devices. A key challenge in realizing these systems is achieving control over light emission from these materials. In this work, we demon- strate the modulation of photoluminescence (PL) in transition metal dichalcogenides (TMDs) coupled to surface lattice resonances in metal nanoparticle arrays. We show that both the intensity and emission angle of light can be tuned by adjusting the lattice parameters. By ap- plying gate electrodes to electrostatically dope the TMDs coupled with plasmonic lattices, we achieve PL intensity switching exceeding two orders of magnitude at low applied voltages. The integration of gate electrodes with plasmonic lattices represents an important step toward the next generation of electrically tunable and powered nanoscale light sources based on 2D semiconductors.
権利情報:
キーワード: photoluminescence control, 2D semiconductors , plasmonic lattices
刊行年月日: 2025-02-04
出版者: American Chemical Society (ACS)
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1021/acsnano.4c15459
関連資料:
その他の識別子:
連絡先:
更新時刻: 2026-02-17 08:30:45 +0900
MDRでの公開時刻: 2026-02-16 18:00:50 +0900
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moilanen-et-al-2025-electrical-control-of-photoluminescence-in-2d-semiconductors-coupled-to-plasmonic-lattices.pdf
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サイズ | 7.19MB | 詳細 |