Yuhao Zhao
;
Maëlle Kapfer
;
Megan Eisele
;
Kenji Watanabe
(National Institute for Materials Science)
;
Takashi Taniguchi
(National Institute for Materials Science)
;
Oded Zilberberg
;
Bjarke S. Jessen
Description:
(abstract)Harnessing graphene devices for applications relies on a comprehensive understanding of how to interact with them. Specifically, scattering processes at the interface with metallic contacts can induce reproducible abnormalities in measurements. Here, we report on emergent trans- port signatures appearing when contacting sub- micrometer high-quality metallic top contacts to graphene. Using electrostatic simulations and first- principle calculations, we reveal their origin: the contact induces an n-doped radial cavity around it, which is cooperatively defined by the metal- induced electrostatic potential and Klein tunnel- ing. This intricate mechanism leads to secondary resistance peaks as a function of graphene doping that decreases with increasing contact size. Interestingly, in the presence of a perpendicular magnetic field, the cavity spawns a distinct set of Landau levels that interferes with the Landau fan emanating from the graphene bulk. Essentially, an emergent ’second bulk’ forms around the contact, as a result of the interplay between the magnetic field and the contact-induced electrostatic potential. The interplay between the intrinsic and emergent bulks leads to direct observation of bulk-boundary correspondence in our experiments. Our work unveils the microscopic mechanisms manifesting at metal-graphene inter- faces, opening new avenues for understanding and devising graphene-based electronic devices.
Rights:
Keyword: metal-graphene contacts, cavity junction, Klein tunneling
Date published: 2025-05-20
Publisher: American Chemical Society (ACS)
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1021/acsnano.4c16191
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Updated at: 2026-02-17 12:30:10 +0900
Published on MDR: 2026-02-17 09:11:02 +0900
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