Article Reconfigurable artificial synapses with an organic antiambipolar transistor for brain-inspired computing

Ryoma Hayakawa SAMURAI ORCID (National Institute for Materials Science) ; Yuho Yamamoto ; Kosuke Yoshikawa (National Institute for Materials Science) ; Yoichi Yamada ; Yutaka Wakayama SAMURAI ORCID (National Institute for Materials Science)

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Ryoma Hayakawa, Yuho Yamamoto, Kosuke Yoshikawa, Yoichi Yamada, Yutaka Wakayama. Reconfigurable artificial synapses with an organic antiambipolar transistor for brain-inspired computing. Journal of Materials Chemistry C. 2025, 13 (28), 14234-14241. https://doi.org/10.1039/d5tc01712b

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(abstract)

Neuromorphic computing, a nonvon Neumann architecture, holds promise for low-power, high-efficiency data processing. Herein, we demonstrated reconfigurable artificial synapses using a floating-gate-type organic antiambipolar transistor (FG-OAAT) to mimic biological synapses. The FG-OAAT exhibited a Λ-shaped transfer curve with negative differential transconductance. A two-dimensional continuous Au film was used as the floating gate to induce a large peak voltage shift in the Λ-shaped transfer curve by controlling hole- and electron-trapping processes in the floating gate. This feature enabled reconfigurable synaptic operations. Long-term potentiation/depression, excitatory/inhibitory, and paired-pulse facilitation/depression functions were electrically reconfigured by tuning the charge conditions in the floating gate. These versatile synaptic operations were induced by a consistent presynaptic signal, with fixed polarity, applied voltage, and pulse width. These behaviors closely resembled those of biological synapses, highlighting the potential for a brain-like computing architecture that surpasses current von Neumann systems.

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Keyword: Reconfigurable artificial synapses, Organic antiambipolar transistor, Floating gate, Negative differential transconductance

Date published: 2025-06-11

Publisher: Royal Society of Chemistry (RSC)

Journal:

  • Journal of Materials Chemistry C (ISSN: 20507526) vol. 13 issue. 28 p. 14234-14241

Funding:

  • National Institute for Materials Science
  • Ministry of Education, Culture, Sports, Science and Technology JPMXP1223NM5170
  • Ministry of Education, Culture, Sports, Science and Technology JPMXP1224NM5158
  • Japan Society for the Promotion of Science 19H00866
  • Japan Society for the Promotion of Science 23H00269
  • Japan Society for the Promotion of Science 24K01564
  • Japan Society for the Promotion of Science 22K18268

Manuscript type: Publisher's version (Version of record)

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First published URL: https://doi.org/10.1039/d5tc01712b

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Updated at: 2025-10-21 15:50:09 +0900

Published on MDR: 2025-10-21 15:43:49 +0900

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