Article Electric field-tunable ferromagnetism in a van der Waals semiconductor up to room temperature

Deyi Fu ; Jiawei Liu ; Fuchen Hou ; Xiao Chang ; Tingyu Qu ; Johan Félisaz ; Gunasheel Kauwtilyaa Krishnaswamy ; Sergey Grebenchuk ; Yuang Jie ; Kenji Watanabe SAMURAI ORCID (National Institute for Materials Science) ; Takashi Taniguchi SAMURAI ORCID (National Institute for Materials Science) ; Vitor M. Pereira ; Kostya S. Novoselov ; Maciej Koperski ; Nikolai L. Yakovlev ; Anjan Soumyanarayanan ; Ahmet Avsar ; Oleg V. Yazyev ; Junhao Lin ; Barbaros Özyilmaz

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Deyi Fu, Jiawei Liu, Fuchen Hou, Xiao Chang, Tingyu Qu, Johan Félisaz, Gunasheel Kauwtilyaa Krishnaswamy, Sergey Grebenchuk, Yuang Jie, Kenji Watanabe, Takashi Taniguchi, Vitor M. Pereira, Kostya S. Novoselov, Maciej Koperski, Nikolai L. Yakovlev, Anjan Soumyanarayanan, Ahmet Avsar, Oleg V. Yazyev, Junhao Lin, Barbaros Özyilmaz. Electric field-tunable ferromagnetism in a van der Waals semiconductor up to room temperature. Nature Communications. 2025, 16 (), 10197. https://doi.org/10.1038/s41467-025-59961-2

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(abstract)

Ferromagnetic semiconductors, coupling charge transport and magnetism via electrical means, show great promise for spin-based logic devices. Despite decades of efforts to achieve such co-functionality, maintaining ferromagnetic order at room temperature remains elusive. Here, we address this long-standing challenge by implanting dilute Co atoms into few-layer black phosphorus through atomically-thin boron nitride diffusion barrier. Our Co-doped black phosphorus-based lateral devices exhibit ferromagnetism up to room temperature while preserving its high mobility (~ 𝟏𝟎𝟎𝟎 𝐜𝐦𝟐𝐕−𝟏𝐬−𝟏) and semiconducting characteristics. By incorporating ferromagnetic Co-doped black phosphorus into magnetic tunnel junction devices, we demonstrate a highly magnetoresistance response that extends up to room temperature. This study presents a new approach to engineer ferromagnetic ordering in otherwise nonmagnetic materials, thereby expanding the repertoire and applications of magnetic semiconductors envisioned thus far.

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Keyword: ferromagnetic semiconductors
, van der Waals, room temperature ferromagnetism


Date published: 2025-11-20

Publisher: Springer Science and Business Media LLC

Journal:

  • Nature Communications (ISSN: 20411723) vol. 16 10197

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Manuscript type: Publisher's version (Version of record)

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First published URL: https://doi.org/10.1038/s41467-025-59961-2

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Updated at: 2026-02-17 12:30:13 +0900

Published on MDR: 2026-02-17 09:11:01 +0900

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