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説明:

Ferromagnetic semiconductors, coupling charge transport and magnetism via electrical means, show great promise for spin-based logic devices. Despite decades of efforts to achieve such co-functionality, maintaining ferromagnetic order at room temperature remains elusive. Here, we address this long-standing challenge by implanting dilute Co atoms into few-layer black phosphorus through atomically-thin boron nitride diffusion barrier. Our Co-doped black phosphorus-based lateral devices exhibit ferromagnetism up to room temperature while preserving its high mobility (~ 𝟏𝟎𝟎𝟎 𝐜𝐦𝟐𝐕−𝟏𝐬−𝟏) and semiconducting characteristics. By incorporating ferromagnetic Co-doped black phosphorus into magnetic tunnel junction devices, we demonstrate a highly magnetoresistance response that extends up to room temperature. This study presents a new approach to engineer ferromagnetic ordering in otherwise nonmagnetic materials, thereby expanding the repertoire and applications of magnetic semiconductors envisioned thus far.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: ferromagnetic semiconductors
, van der Waals, room temperature ferromagnetism


刊行年月日: 2025-11-20

出版者: Springer Science and Business Media LLC

掲載誌:

• Nature Communications (ISSN: 20411723) vol. 16 10197

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41467-025-59961-2

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更新時刻: 2026-02-17 12:30:13 +0900

MDRでの公開時刻: 2026-02-17 09:11:01 +0900