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BiCuSeO has intrinsically low electrical conductivity, high Seebeck coefficient and low thermal conductivity. Therefore, the improvement of BiCuSeO thermoelectric performance focuses on enhancing its electrical conductivity. In this study, we report one of the strategies to optimize carrier concentration by Cr doped on Cu site. After doping with Cr, enhanced electrical conductivity coupled with a moderate Seebeck coefficient leads to power factor of ~0.4 – 0.6 mW/mK2 at 323 – 773 K. It is increased of ~4 – 6 times compared to pure BiCuSeO. Moreover, Cr doping reduces lattice thermal conductivity by ~21% as confirmed by both experimental result and Callaway model calculation. The analysis indicates that the lattice thermal conductivity can be reduced to 0.5 W m-1 K-1 at 773 K through the combined effect of point defect and phonon – electron scattering. The combination of optimized power factor and intrinsically low thermal conductivity result in high ZTmax and ZTaverage. The ZTmax and ZTaverage values were obtained in the BiCu0.96Cr0.04SeO sample of ~1.0 at 675 K and ~0.83 at 323 – 773 K, respectively. The high ZT of ~0.9 is realized over a broad temperature range from 473 to 773 K. This strategy makes BiCuSeO a promising candidate for medium temperature thermoelectric applications.

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• In Copyright
  

Keyword: thermoelectric

Date published: 2025-03-11

Publisher: Royal Society of Chemistry (RSC)

Journal:

• Journal of Materials Chemistry C (ISSN: 20507526) vol. 13 issue. 15 p. 7617-7624

Funding:

• Lembaga Pengelola Dana Pendidikan
• JST-Mirai Program JPMJMI19A1

Manuscript type: Author's version (Submitted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5886

First published URL: https://doi.org/10.1039/d4tc05369a

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Updated at: 2025-11-11 12:30:14 +0900

Published on MDR: 2025-11-11 12:22:33 +0900