論文 High thermoelectric performance of BiCuSeO by optimized carrier concentration and point defect scattering through a Cr-induced compositing effect

Asep Ridwan Nugraha ; Shamim Sk ORCID (National Institute for Materials Science) ; Andrei Novitskii SAMURAI ORCID (National Institute for Materials Science) ; Dedi ; Fainan Failamani ; Bambang Prijamboedi ; Takao Mori SAMURAI ORCID (National Institute for Materials Science) ; Agustinus Agung Nugroho

コレクション

引用
Asep Ridwan Nugraha, Shamim Sk, Andrei Novitskii, Dedi, Fainan Failamani, Bambang Prijamboedi, Takao Mori, Agustinus Agung Nugroho. High thermoelectric performance of BiCuSeO by optimized carrier concentration and point defect scattering through a Cr-induced compositing effect. Journal of Materials Chemistry C. 2025, 13 (15), 7617-7624. https://doi.org/10.1039/d4tc05369a

説明:

(abstract)

BiCuSeO has intrinsically low electrical conductivity, high Seebeck coefficient and low thermal conductivity. Therefore, the improvement of BiCuSeO thermoelectric performance focuses on enhancing its electrical conductivity. In this study, we report one of the strategies to optimize carrier concentration by Cr doped on Cu site. After doping with Cr, enhanced electrical conductivity coupled with a moderate Seebeck coefficient leads to power factor of ~0.4 – 0.6 mW/mK2 at 323 – 773 K. It is increased of ~4 – 6 times compared to pure BiCuSeO. Moreover, Cr doping reduces lattice thermal conductivity by ~21% as confirmed by both experimental result and Callaway model calculation. The analysis indicates that the lattice thermal conductivity can be reduced to 0.5 W m-1 K-1 at 773 K through the combined effect of point defect and phonon – electron scattering. The combination of optimized power factor and intrinsically low thermal conductivity result in high ZTmax and ZTaverage. The ZTmax and ZTaverage values were obtained in the BiCu0.96Cr0.04SeO sample of ~1.0 at 675 K and ~0.83 at 323 – 773 K, respectively. The high ZT of ~0.9 is realized over a broad temperature range from 473 to 773 K. This strategy makes BiCuSeO a promising candidate for medium temperature thermoelectric applications.

権利情報:

キーワード: thermoelectric

刊行年月日: 2025-03-11

出版者: Royal Society of Chemistry (RSC)

掲載誌:

  • Journal of Materials Chemistry C (ISSN: 20507526) vol. 13 issue. 15 p. 7617-7624

研究助成金:

  • Lembaga Pengelola Dana Pendidikan
  • JST-Mirai Program JPMJMI19A1

原稿種別: 査読前原稿 (Author's original)

MDR DOI: https://doi.org/10.48505/nims.5886

公開URL: https://doi.org/10.1039/d4tc05369a

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更新時刻: 2025-11-11 12:30:14 +0900

MDRでの公開時刻: 2025-11-11 12:22:33 +0900

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