Dhruba B. Khadka
(National Institute for Materials Science
)
;
Yasuhiro Shirai
(National Institute for Materials Science
)
;
Masatoshi Yanagida
(National Institute for Materials Science
)
;
Takeshi Noda
(National Institute for Materials Science
)
;
Kenjiro Miyano
(National Institute for Materials Science
)
Description:
(abstract)Wide bandgap perovskite devices are promising as the top cell of silicon-perovskite tandem devices to boost the efficiency beyond the Shockley-Queisser limit. Here, we tailor the performance parameters of wide bandgap (WB) (MAPb(I1-xBrx)3) perovskite based device with long chain alkyl substituted fullerene derivatives as an electron transport layer (ETL). The device with C60-fused N-methylpyrrolidine-meta-dodecyl phenyl (C60MC12) demonstrates an enhanced efficiency of 16.74 % with the record open circuit voltage (VOC) of 1.24 V; an increase by 70 mV with concomitant VOC deficit reduction to 0.47 V. This is achieved by mitigating the recombination loss through the use of highly crystalline C60MC12 film compared to amorphous PCBM layer. The device analysis reveals the soothing of the defect
Rights:
This document is the Accepted Manuscript version of a Published Work that appeared in final form in Tailoring the Open-Circuit Voltage Deficit of Wide-Band-Gap Perovskite Solar Cells Using Alkyl Chain-Substituted Fullerene Derivatives, copyright © 2018 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsami.8b04439.
Keyword: Wide bandgap Perovskite, Fullerene derivatives, Crystallinity, VOC deficit, Defect in perovskite
Date published: 2018-07-05
Publisher: American Chemical Society (ACS)
Journal:
Funding:
Manuscript type: Author's version (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.5128
First published URL: https://doi.org/10.1021/acsami.8b04439
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Updated at: 2024-12-10 16:56:03 +0900
Published on MDR: 2024-12-10 16:56:03 +0900
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ACS-AMI-Accepted Author Version.pdf
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