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Wide bandgap perovskite devices are promising as the top cell of silicon-perovskite tandem devices to boost the efficiency beyond the Shockley-Queisser limit. Here, we tailor the performance parameters of wide bandgap (WB) (MAPb(I1-xBrx)3) perovskite based device with long chain alkyl substituted fullerene derivatives as an electron transport layer (ETL). The device with C60-fused N-methylpyrrolidine-meta-dodecyl phenyl (C60MC12) demonstrates an enhanced efficiency of 16.74 % with the record open circuit voltage (VOC) of 1.24 V; an increase by 70 mV with concomitant VOC deficit reduction to 0.47 V. This is achieved by mitigating the recombination loss through the use of highly crystalline C60MC12 film compared to amorphous PCBM layer. The device analysis reveals the soothing of the defect

権利情報:

• In Copyright
  

  This document is the Accepted Manuscript version of a Published Work that appeared in final form in Tailoring the Open-Circuit Voltage Deficit of Wide-Band-Gap Perovskite Solar Cells Using Alkyl Chain-Substituted Fullerene Derivatives, copyright © 2018 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsami.8b04439.

キーワード: Wide bandgap Perovskite, Fullerene derivatives, Crystallinity, VOC deficit, Defect in perovskite

刊行年月日: 2018-07-05

出版者: American Chemical Society (ACS)

掲載誌:

• ACS Applied Materials & Interfaces (ISSN: 19448252) vol. 10 issue. 26 p. 22074-22082

研究助成金:

• Japan Society for the Promotion of Science JP16K06285
• Advanced Low Carbon Technology Research and Development Program

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5128

公開URL: https://doi.org/10.1021/acsami.8b04439

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更新時刻: 2024-12-10 16:56:03 +0900

MDRでの公開時刻: 2024-12-10 16:56:03 +0900