J.M. Gong
;
X. Liu
;
L.H. Yang
;
A. Sulyok
;
Z. Baji
;
V. Kis
;
K. Tőkési
;
R.G. Zeng
;
G.J. Fang
;
J.B. Gong
;
X.D. Xiao
;
B. Da
(National Institute for Materials Science
)
;
Z.J. Ding
Collection
Citation
Description:
(abstract)The optical properties of HfO2 have practical applications. As an important gate dielectric material with high-k dielectric, HfO2 is beneficial to reduce the leakage current of the complementary metal-oxide-semiconductor (CMOS) gate and improves the gate structure. A comparison with previous results indicates that the ELF peak positions of HfO2 with different crystal structures are similar, but the peak intensity and shape are different. The heterogenicity of the crystal structure of HfO2 leads to different measurement results for different samples.
Rights:
Keyword: optical data
Date published: 2024-07-28
Publisher: Elsevier BV
Journal:
- Journal of Alloys and Compounds (ISSN: 09258388) vol. 1005 175744
Funding:
Manuscript type: Author's version (Submitted manuscript)
MDR DOI: https://doi.org/10.48505/nims.5112
First published URL: https://doi.org/10.1016/j.jallcom.2024.175744
Related item:
Other identifier(s):
Contact agent:
Updated at: 2024-12-07 12:30:14 +0900
Published on MDR: 2024-12-07 12:30:15 +0900
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Optical properties of hafnium-dioxide derived from reflection electron energy loss spectroscopy spectra (1).pdf
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