J.M. Gong
;
X. Liu
;
L.H. Yang
;
A. Sulyok
;
Z. Baji
;
V. Kis
;
K. Tőkési
;
R.G. Zeng
;
G.J. Fang
;
J.B. Gong
;
X.D. Xiao
;
B. Da
(National Institute for Materials Science
)
;
Z.J. Ding
コレクション
引用
説明:
(abstract)The optical properties of HfO2 have practical applications. As an important gate dielectric material with high-k dielectric, HfO2 is beneficial to reduce the leakage current of the complementary metal-oxide-semiconductor (CMOS) gate and improves the gate structure. A comparison with previous results indicates that the ELF peak positions of HfO2 with different crystal structures are similar, but the peak intensity and shape are different. The heterogenicity of the crystal structure of HfO2 leads to different measurement results for different samples.
権利情報:
キーワード: optical data
刊行年月日: 2024-07-28
出版者: Elsevier BV
掲載誌:
- Journal of Alloys and Compounds (ISSN: 09258388) vol. 1005 175744
研究助成金:
原稿種別: 査読前原稿 (Author's original)
MDR DOI: https://doi.org/10.48505/nims.5112
公開URL: https://doi.org/10.1016/j.jallcom.2024.175744
関連資料:
その他の識別子:
連絡先:
更新時刻: 2024-12-07 12:30:14 +0900
MDRでの公開時刻: 2024-12-07 12:30:15 +0900
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Optical properties of hafnium-dioxide derived from reflection electron energy loss spectroscopy spectra (1).pdf
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サイズ | 1.74MB | 詳細 |