Tetsuichi Kishishita
;
Kimiyoshi Ichikawa
(National Institute for Materials Science)
;
Kazuya Tauchi
;
Masayoshi Shoji
;
Masayuki Hagiwara
;
Satoshi Koizumi
(National Institute for Materials Science)
;
Manobu M. Tanaka
説明:
(abstract)We report on the membrane diamond detector, which consists of 5 μm-thick diamond p-i-n diodes and a dedicated front-end ASIC, fabricated in a 65 nm CMOS technology. The p-i-n diode has an attractive feature for low γ-ray sensitivities due to its extremely thin drift layer, which is difficult to form by etching of bulk diamond with a Metal-Insulator-Metal structure. The pseudo-vertical p-i-n diode structure was formed on the single crystal diamond {111} substrate by MWCVD and dry-etching process. The readout electronics was designed to meet specifications for real-time neutron monitoring in harsh γ-ray environments. The prototype system was evaluated in charge distribution measurements induced by α-particles from 241 Am. The charge spectra were successfully obtained from multi-channels, each of which has a diameter of 250 μm aligning in a pixel matrix. By combining with neutron converters, e.g ., 10 B or 7 Li, we expect the detector system as a good candidate for detecting spontaneous fission neutrons, emitted from submerged fuel debris at the Fukushima Daiichi Nuclear Power Plant in Japan.
権利情報:
キーワード: Diamond, Nuclear power plant, alpha particle, gamma ray
刊行年月日: 2023-10-03
出版者: Informa UK Limited
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1080/00223131.2023.2190548
関連資料:
その他の識別子:
連絡先:
更新時刻: 2024-02-07 15:14:37 +0900
MDRでの公開時刻: 2024-02-07 16:30:25 +0900
| ファイル名 | サイズ | |||
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A membrane pseudo-vertical p-i-n diamond detector.pdf
(サムネイル)
application/pdf |
サイズ | 2.02MB | 詳細 |