Description:
(abstract)Intrinsic resistivity changes associated with charge density wave (CDW) phase transitions in 1T –TaS2 hold promise for non-volatile memory and computing de- vices based on the principle of phase change memory. Intermediate resistance states, which offer distinctive opportunities for neuromorphic computing, have been observed in 1T–TaS2 but the metastability responsible for this behavior makes the nature of multistate switching unpredictable. Here, we demonstrate the synthesis of nanothick verti-lateral 1H –TaS2/1T –TaS2 heterostructures in which the number of endotaxial metallic 1H –TaS2 monolayers precisely dictates the number of high-temperature resistance transitions in 1T–TaS2 lamellae. Fur- ther, we also observe heterochirality in the CDW superlattice structure, which is also modulated in concert with the resistivity steps. This thermally-induced polytype conversion nucleates at folds and kinks where interlayer translations that relax local strain favorably align 1H and 1T layers. This work positions endotaxial TaS2 heterostructures as prime candidates for non-volatile device schemes implementing coupled switching of structure, chirality, and resistance.
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Keyword: High-density phase change memory, charge density wave, metastability
Date published: 2023-09-27
Publisher: Springer Science and Business Media LLC
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Manuscript type: Publisher's version (Version of record)
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First published URL: https://doi.org/10.1038/s41467-023-41780-y
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Updated at: 2025-02-11 12:30:23 +0900
Published on MDR: 2025-02-11 12:30:23 +0900
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