Journal article Encoding multistate charge order and chirality in endotaxial heterostructures
Samra Husremović (author) (Search by this author)
;
Berit H. Goodge (author) (Search by this author)
;
Matthew P. Erodici (author) (Search by this author)
;
Katherine Inzani (author) (Search by this author)
;
Alberto Mier (author) (Search by this author)
;
Stephanie M. Ribet (author) (Search by this author)
;
Karen C. Bustillo (author) (Search by this author)
;
Takashi Taniguchi (author) (Search by this author)
ORCID SAMURAI ;
Kenji Watanabe (author) (Search by this author)
ORCID SAMURAI ;
Colin Ophus (author) (Search by this author)
;
Sinéad M. Griffin (author) (Search by this author)
;
D. Kwabena Bediako (author) (Search by this author)
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Citation
Samra Husremović, Berit H. Goodge, Matthew P. Erodici, Katherine Inzani, Alberto Mier, Stephanie M. Ribet, Karen C. Bustillo, Takashi Taniguchi, Kenji Watanabe, Colin Ophus, Sinéad M. Griffin, D. Kwabena Bediako. Encoding multistate charge order and chirality in endotaxial heterostructures. Nature Communications. 2023, 14 (1), 6031. https://doi.org/10.1038/s41467-023-41780-y
SAMURAI

Description:

(abstract)

Intrinsic resistivity changes associated with charge density wave (CDW) phase transitions in 1T –TaS2 hold promise for non-volatile memory and computing de- vices based on the principle of phase change memory. Intermediate resistance states, which offer distinctive opportunities for neuromorphic computing, have been observed in 1T–TaS2 but the metastability responsible for this behavior makes the nature of multistate switching unpredictable. Here, we demonstrate the synthesis of nanothick verti-lateral 1H –TaS2/1T –TaS2 heterostructures in which the number of endotaxial metallic 1H –TaS2 monolayers precisely dictates the number of high-temperature resistance transitions in 1T–TaS2 lamellae. Fur- ther, we also observe heterochirality in the CDW superlattice structure, which is also modulated in concert with the resistivity steps. This thermally-induced polytype conversion nucleates at folds and kinks where interlayer translations that relax local strain favorably align 1H and 1T layers. This work positions endotaxial TaS2 heterostructures as prime candidates for non-volatile device schemes implementing coupled switching of structure, chirality, and resistance.

Rights:

Keyword: High-density phase change memory, charge density wave, metastability

Date published: 2023-09-27

Publisher: Springer Science and Business Media LLC

Journal:

  • Nature Communications (ISSN: 20411723) vol. 14 issue. 1 6031

Funding:

  • United States Department of Defense | United States Air Force | AFMC | Air Force Office of Scientific Research FA9550-20-1-0007
  • United States Department of Defense | United States Navy | Office of Naval Research N00014-20-1-2599
  • Gordon and Betty Moore Foundation 10637
  • Canadian Institute for Advanced Research GS21-011
  • DOE | SC | Basic Energy Sciences DE-AC02-05CH11231
  • University of California Presidential Postdoctoral Fellowship (PPFP) Schmidt Science Fellows, in partnership with the Rhodes Trust.
  • RCUK | Engineering and Physical Sciences Research Council EP/W028131/1
  • DOE SCGSR program; IIN Ryan Fellowship; 3M Northwestern Graduate Research Fellowship
  • MEXT | Japan Society for the Promotion of Science 19H05790
  • MEXT | Japan Society for the Promotion of Science 20H00354
  • MEXT | Japan Society for the Promotion of Science 21H05233
  • MEXT | Japan Society for the Promotion of Science 20H00354
  • MEXT | Japan Society for the Promotion of Science 21H05233

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1038/s41467-023-41780-y

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Updated at: 2025-02-11 12:30:23 +0900

Published on MDR: 2025-02-11 12:30:23 +0900

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