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Intrinsic resistivity changes associated with charge density wave (CDW) phase transitions in 1T –TaS2 hold promise for non-volatile memory and computing de- vices based on the principle of phase change memory. Intermediate resistance states, which offer distinctive opportunities for neuromorphic computing, have been observed in 1T–TaS2 but the metastability responsible for this behavior makes the nature of multistate switching unpredictable. Here, we demonstrate the synthesis of nanothick verti-lateral 1H –TaS2/1T –TaS2 heterostructures in which the number of endotaxial metallic 1H –TaS2 monolayers precisely dictates the number of high-temperature resistance transitions in 1T–TaS2 lamellae. Fur- ther, we also observe heterochirality in the CDW superlattice structure, which is also modulated in concert with the resistivity steps. This thermally-induced polytype conversion nucleates at folds and kinks where interlayer translations that relax local strain favorably align 1H and 1T layers. This work positions endotaxial TaS2 heterostructures as prime candidates for non-volatile device schemes implementing coupled switching of structure, chirality, and resistance.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: High-density phase change memory, charge density wave, metastability

刊行年月日: 2023-09-27

出版者: Springer Science and Business Media LLC

掲載誌:

• Nature Communications (ISSN: 20411723) vol. 14 issue. 1 6031

研究助成金:

• United States Department of Defense | United States Air Force | AFMC | Air Force Office of Scientific Research FA9550-20-1-0007
• United States Department of Defense | United States Navy | Office of Naval Research N00014-20-1-2599
• Gordon and Betty Moore Foundation 10637
• Canadian Institute for Advanced Research GS21-011
• DOE | SC | Basic Energy Sciences DE-AC02-05CH11231
• University of California Presidential Postdoctoral Fellowship (PPFP) Schmidt Science Fellows, in partnership with the Rhodes Trust.
• RCUK | Engineering and Physical Sciences Research Council EP/W028131/1
• DOE SCGSR program; IIN Ryan Fellowship; 3M Northwestern Graduate Research Fellowship
• MEXT | Japan Society for the Promotion of Science 19H05790
• MEXT | Japan Society for the Promotion of Science 20H00354
• MEXT | Japan Society for the Promotion of Science 21H05233
• MEXT | Japan Society for the Promotion of Science 20H00354
• MEXT | Japan Society for the Promotion of Science 21H05233

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41467-023-41780-y

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更新時刻: 2025-02-11 12:30:23 +0900

MDRでの公開時刻: 2025-02-11 12:30:23 +0900