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説明:

The use of metal and semimetal van der Waals contacts for 2D semiconducting devices has led to remarkable device optimizations. In comparison with conventional thin-film metal deposition, a reduction in Fermi level pinning at the contact interface for van der Waals contacts results in, generally, lower contact resistances and higher mobilities. Van der Waals contacts also lead to Schottky barriers that follow the Schottky–Mott rule, allowing barrier estimates on material properties alone. In this study, we present a double Schottky barrier model and apply it to a barrier tunable all van der Waals transistor. In a molybdenum disulfide (MoS2) transistor with graphene and few-layer graphene contacts, we find that the model can be applied to extract Schottky barrier heights that agree with the Schottky–Mott rule from simple two-terminal current–voltage measurements at room temperature. Furthermore, we show tunability of the Schottky barrier in-situ using a regional contact gate. Our results highlight the utility of a basic back-to-back diode model in extracting device characteristics in all van der Waals transistors.
Keywords: diodes, back-to-back, model, applied, MoS2, van der Waals

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Van der Waals contacts, Schottky barrier, MoS2 transistor

刊行年月日: 2024-11-13

出版者: IOP Publishing

掲載誌:

• Journal of Physics: Condensed Matter (ISSN: 09538984) vol. 36 issue. 45 p. 455301-

研究助成金:

• Division of Materials Research 2047509
• Army Research Office W911NF2310160
• JSPS KAKENHI 21H05233

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1088/1361-648x/ad69ef

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更新時刻: 2025-02-05 12:30:37 +0900

MDRでの公開時刻: 2025-02-05 12:30:37 +0900