Nobuya Banno
(National Institute for Materials Science)
;
Taku Moronaga
(National Institute for Materials Science)
;
Toru Hara
(National Institute for Materials Science)
;
Koki Asai
;
Tsuyoshi Yagai
Description:
(abstract)In this article, the grain morphologies of Ti–Hf and Ta–Hf-doped Nb3Sn layers were clarified by scanning transmission electron microscopy (STEM) and TEM-based automated crystal orientation mapping (ACOM-TEM). STEM/energy dispersive X-ray spectroscopy (EDS) revealed no significant oxide precipitates in our samples. The grain size distribution was attained by ACOM-TEM. One remarkable new finding through STEM/EDS was the presence of a Cu–Hf compound phase in the Nb3Sn layer. The large Cu deposition on the grain boundaries might facilitate grain growth in Nb3Sn.
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Keyword: Nb3Sn, Hf doping, ACOM-TEM, TEM, grain growth
Date published: 2024-03-01
Publisher: IOP Publishing
Journal:
Funding:
Manuscript type: Author's version (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.4475
First published URL: https://doi.org/10.1088/1361-6668/ad2982
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Updated at: 2025-02-14 12:31:24 +0900
Published on MDR: 2025-02-14 12:31:24 +0900
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Proof_SUST_v37_n3_2024_035019_(Banno_STEM-HfTa-HfTi-Nb3Sn).pdf
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