Journal article Optical detection of charge defects near a graphene transistor using the Stark shift of fluorescent molecules
Carlotta Ciancico (author) (Search by this author)
;
Iacopo Torre (author) (Search by this author)
;
Bernat Terrés (author) (Search by this author)
;
Alvaro Moreno (author) (Search by this author)
;
Robert Smit (author) (Search by this author)
;
Kenji Watanabe (author) (Search by this author)
ORCID SAMURAI ;
Takashi Taniguchi (author) (Search by this author)
ORCID SAMURAI ;
Michel Orrit (author) (Search by this author)
;
Frank Koppens (author) (Search by this author)
;
Antoine Reserbat-Plantey (author) (Search by this author)
Collection

Citation
Carlotta Ciancico, Iacopo Torre, Bernat Terrés, Alvaro Moreno, Robert Smit, Kenji Watanabe, Takashi Taniguchi, Michel Orrit, Frank Koppens, Antoine Reserbat-Plantey. Optical detection of charge defects near a graphene transistor using the Stark shift of fluorescent molecules. APL Quantum. 2025, 2 (3), 036101. https://doi.org/10.1063/5.0274182

Description:

(abstract)

Two-dimensional crystals and their heterostructures unlock access to a class of photonic devices, bringing nanophotonics from the nanometer scale down to the atomic level where quantum effects are relevant. Single-photon emitters (SPEs) are central in quantum photonics as quantum markers linked to their electrostatic, thermal, magnetic, or dielectric environment. This aspect is exciting in two-dimensional (2D) crystals and their heterostructures, where the environment can be abruptly modified through vertical stacking or lateral structuring, such as moiré or nano-patterned gates. To further develop 2D-based quantum photonic devices, there is a need for quantum markers that are capable of integration into various device geometries, and that can be read out individually, non- destructively, and without additional electrodes. Here, we show how to optically detect charge carrier accumulation using sub-GHz linewidth single-photon emitters coupled to a graphene device. We employ the single molecule Stark effect, sensitive to the electric fields generated by charge puddles, such as those at the graphene edge. The same approach enables dynamic sensing of electronic noise, and we demonstrate the optical read-out of low-frequency white noise in a biased graphene device. The approach described here can be further exploited to explore charge dynamics in 2D heterostructures using quantum emitter markers.

Rights:

Keyword: charge defects, graphene transistor
, Stark shift


Date published: 2025-09-01

Publisher: AIP Publishing

Journal:

  • APL Quantum vol. 2 issue. 3 p. 36101-36101 036101

Funding:

  • QuantERA 731473
  • Fundación Carmen y Severo Ochoa SEV-2015-0522
  • Agence Nationale de La Recherche
  • Air Force Office of Scientific Research FA8655-23-1-7047

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1063/5.0274182

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Updated at: 2026-05-11 13:21:53 +0900

Published on MDR: 2026-05-11 16:25:06 +0900

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