Daiki Nishioka
(National Institute for Materials Science)
;
Hina Kitano
(National Institute for Materials Science)
;
Wataru Namiki
(National Institute for Materials Science)
;
Satofumi Souma
;
Kazuya Terabe
(National Institute for Materials Science)
;
Takashi Tsuchiya
(National Institute for Materials Science)
Description:
(abstract)The rising energy demands of conventional AI systems underscore the need for efficient computing technologies, such as brain-inspired computing. Physical reservoir computing (PRC), leveraging the nonlinear dynamics of physical systems for information processing, has emerged as a promising approach for neuromorphic computing. However, current PRC systems are constrained by narrow responsive time scales and limited performance. To address these challenges, an ion-gel/graphene electric double layer (EDL) transistor-based ion-gating reservoir (IGR) was developed. This IGR achieves a highly tunable and ultrawide time-scale response through the coexistence of fast EDL dynamics at the ion-gel/graphene interface and slower molecular adsorption dynamics on the graphene surface. Consequently, the system demonstrates an exceptionally broad responsive range, from 1 MHz to 20 Hz, while maintaining a high information processing capacity and adaptability across multiple time scales.
Rights:
Keyword: reservoir computing, neuromorphic computing, ion-gating reservoir, electric doube layer transistor, iontronics
Date published: 2025-10-28
Publisher: American Chemical Society (ACS)
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1021/acsnano.5c06174
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Updated at: 2025-12-09 16:30:21 +0900
Published on MDR: 2025-12-09 12:30:33 +0900
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