Ryuji Fujita
;
Gautam Gurung
;
Mohamad‐Assaad Mawass
;
Alevtina Smekhova
;
Florian Kronast
;
Alexander Kang‐Jun Toh
;
Anjan Soumyanarayanan
;
Pin Ho
;
Angadjit Singh
;
Emily Heppell
;
Dirk Backes
;
Francesco Maccherozzi
;
Kenji Watanabe
(National Institute for Materials Science)
;
Takashi Taniguchi
(National Institute for Materials Science)
;
Daniel A. Mayoh
;
Geetha Balakrishnan
;
Gerrit van der Laan
;
Thorsten Hesjedal
Description:
(abstract)The van der Waals interaction enables thin layers of two-dimensional materials to be interfaced in heterostructures with relaxed epitaxy conditions. However, the ability to freely stack layers without any strain or structural modification is by no means universal. In this work, we utilize the piezoelectricity of α-In2Se3 to modify the magnetic properties of thin layers of the vdW ferromagnet Fe3GeTe2, resulting in increased domain wall density, reductions in the transition temperature ranging from 5 to 20 K, and an increase in the magnetic coercivity. Structural modifications at the atomic level are corroborated by a decrease in the Tuinstra-Koenig ratio, I(D)/I(G) in a graphite/α-In2Se3 heterostructure. Density functional theory calculations show that the Fe3GeTe2 layer is compressively strained by 0.4%. The incorporation of α-In2Se3 may be a general strategy to electrostatically strain interfaces in magnetoelectric vdW heterostructures.
Rights:
Keyword: van der Waals interaction, exfoliated 2D materials, magnetic properties
Date published: 2024-03-14
Publisher: Wiley
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1002/adfm.202400552
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Updated at: 2025-02-14 12:31:21 +0900
Published on MDR: 2025-02-14 12:31:21 +0900
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Adv Funct Materials - 2024 - Fujita - Strain‐Modulated Ferromagnetism at an Intrinsic van der Waals Heterojunction.pdf
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