Download file (12MB)
Download as zip (11.8MB)

コレクション

引用

説明:

The van der Waals interaction enables thin layers of two-dimensional materials to be interfaced in heterostructures with relaxed epitaxy conditions. However, the ability to freely stack layers without any strain or structural modification is by no means universal. In this work, we utilize the piezoelectricity of α-In2Se3 to modify the magnetic properties of thin layers of the vdW ferromagnet Fe3GeTe2, resulting in increased domain wall density, reductions in the transition temperature ranging from 5 to 20 K, and an increase in the magnetic coercivity. Structural modifications at the atomic level are corroborated by a decrease in the Tuinstra-Koenig ratio, I(D)/I(G) in a graphite/α-In2Se3 heterostructure. Density functional theory calculations show that the Fe3GeTe2 layer is compressively strained by 0.4%. The incorporation of α-In2Se3 may be a general strategy to electrostatically strain interfaces in magnetoelectric vdW heterostructures.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: van der Waals interaction, exfoliated 2D materials, magnetic properties

刊行年月日: 2024-03-14

出版者: Wiley

掲載誌:

• Advanced Functional Materials (ISSN: 16163028) vol. 34 issue. 36 2400552

研究助成金:

• Ministry of Education, Culture, Sports, Science and Technology
• Engineering and Physical Sciences Research Council EP/N032128/1
• Engineering and Physical Sciences Research Council EP/X015793/1
• Helmholtz-Zentrum Berlin für Materialien und Energie 212‐10475‐ST
• Diamond Light Source MM31730
• Ministry of Education - Singapore A18A6b0057
• Ministry of Education - Singapore A20G9b0135
• Earth Observatory of Singapore A20G9b0135
• Japan Society for the Promotion of Science London 21H05233
• Japan Society for the Promotion of Science London 23H02052
• Deutsche Forschungsgemeinschaft 328545488

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1002/adfm.202400552

関連資料:

その他の識別子:

連絡先:

更新時刻: 2025-02-14 12:31:21 +0900

MDRでの公開時刻: 2025-02-14 12:31:21 +0900