Article Inelastic resonant tunnelling through adjacent localised electronic states in van der Waals heterostructures

E. E. Vdovin ; K. Kapralov ; Yu. N. Khanin ; A. Margaryan ; K. Watanabe SAMURAI ORCID (National Institute for Materials Science) ; T. Taniguchi SAMURAI ORCID (National Institute for Materials Science) ; C. Yang ; S. V. Morozov ; D. A. Svintsov ; K. S. Novoselov ; D. A. Ghazaryan

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E. E. Vdovin, K. Kapralov, Yu. N. Khanin, A. Margaryan, K. Watanabe, T. Taniguchi, C. Yang, S. V. Morozov, D. A. Svintsov, K. S. Novoselov, D. A. Ghazaryan. Inelastic resonant tunnelling through adjacent localised electronic states in van der Waals heterostructures. npj 2D Materials and Applications. 2025, 9 (1), 7. https://doi.org/10.1038/s41699-025-00528-6

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(abstract)

Van der Waals heterostructures offer unprecedented opportunities to design next stage functional electronic 2D devices. Most architectures of those devices incorporate large bandgap insulator– hBN as an encapsulating or tunnel barrier layers. Here, we use an architecture of gated vertical tunnelling transistors to study a generic phenomenon of electron resonant tunnelling through adjacent localised electronic states in hBN barriers. We demonstrate that in the case of two localised electronic states, the tunnelling can be of inelastic nature giving rise to explicitly strong resonant features. It allows accurate tunnelling spectroscopy of delicate features of emitting and collecting layer electronic density of states, such as second neutrality point bandgap of moiré monolayer and electric eld induced bandgap of Bernal bilayer graphene. Our findings enrich the perception of interaction mechanisms among the localised electronic states in hBN barriers paving the way for future explorations into their applications.

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Keyword: inelastic resonant tunneling
, van der Waals heterostructures
, hBN barriers


Date published: 2025-01-26

Publisher: Springer Science and Business Media LLC

Journal:

  • npj 2D Materials and Applications (ISSN: 23977132) vol. 9 issue. 1 7

Funding:

  • RSF 23-12-00115
  • National Research Foundation, Singapore under its AI Singapore Programme AISG Award No: AISG3-RP-2022-028
  • Royal Society grant number RSRP\R\190000
  • Ministry of Education, Singapore (Research Centre of Excellence award to the Institute for Functional Intelligent Materials, I-FIM project No. EDUNC-33-18-279-V12
  • NAS of Republic of Armenia within the framework of the “Young Scientists” support program 24YSSPS-7

Manuscript type: Publisher's version (Version of record)

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First published URL: https://doi.org/10.1038/s41699-025-00528-6

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Updated at: 2026-03-03 08:30:29 +0900

Published on MDR: 2026-03-02 17:20:28 +0900

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