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説明:

Van der Waals heterostructures offer unprecedented opportunities to design next stage functional electronic 2D devices. Most architectures of those devices incorporate large bandgap insulator– hBN as an encapsulating or tunnel barrier layers. Here, we use an architecture of gated vertical tunnelling transistors to study a generic phenomenon of electron resonant tunnelling through adjacent localised electronic states in hBN barriers. We demonstrate that in the case of two localised electronic states, the tunnelling can be of inelastic nature giving rise to explicitly strong resonant features. It allows accurate tunnelling spectroscopy of delicate features of emitting and collecting layer electronic density of states, such as second neutrality point bandgap of moiré monolayer and electric eld induced bandgap of Bernal bilayer graphene. Our findings enrich the perception of interaction mechanisms among the localised electronic states in hBN barriers paving the way for future explorations into their applications.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: inelastic resonant tunneling
, van der Waals heterostructures
, hBN barriers


刊行年月日: 2025-01-26

出版者: Springer Science and Business Media LLC

掲載誌:

• npj 2D Materials and Applications (ISSN: 23977132) vol. 9 issue. 1 7

研究助成金:

• RSF 23-12-00115
• National Research Foundation, Singapore under its AI Singapore Programme AISG Award No: AISG3-RP-2022-028
• Royal Society grant number RSRP\R\190000
• Ministry of Education, Singapore (Research Centre of Excellence award to the Institute for Functional Intelligent Materials, I-FIM project No. EDUNC-33-18-279-V12
• NAS of Republic of Armenia within the framework of the “Young Scientists” support program 24YSSPS-7

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41699-025-00528-6

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更新時刻: 2026-03-03 08:30:29 +0900

MDRでの公開時刻: 2026-03-02 17:20:28 +0900